Thermal stability of post-growth-annealed Ga-doped MgZnO films grown by the RF sputtering method

Kuang Po Hsueh, Po Wei Cheng, Wen Yen Lin, Hsien Chin Chiu, Hsiang Chun Wang, Jinn-Kong Sheu, Yu Hsiang Yeh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A radio-frequency magnetron sputtering technique and subsequent rapid thermal annealing (RTA) at 600, 700, 800, and 900 °C were implemented to grow high-quality Ga-doped Mg x Zn 1-x O (GMZO) epi-layers. The GMZO films were deposited using a radio-frequency magnetron sputtering system and a 4 inch ZnO/MgO/Ga 2 O 3 (75/20/5 wt %) target. The Hall results, X-ray diffraction (XRD), and transmittance were determined and are reported in this paper. The Hall results indicated that the increase in mobility was likely caused by the improved crystallization in the GMZO films after thermal annealing. The XRD results revealed that Mg x Zn 1-x O (111) and MgO 2 (200) peaks were obtained in the GMZO films. The absorption edges of the as-grown and annealed GMZO films shifted toward the short wavelength of 373 ran at a transmittance of 90%. According to these results, GMZO films are feasible for forming transparent contact layers for near-ultraviolet light-emitting diodes.

Original languageEnglish
Title of host publicationSynthesis, Characterization, and Applications of Functional Materials - Thin Films and Nanostructures
EditorsQuanxi Jia, Dhananjay Kumar, Xavier Obradors, Kaushal K. Singh, Valentin Craciun, Maryline Guilloux-Viry, Menka Jain, Hiromitsu Kozuka, Sanjay Mathur
PublisherMaterials Research Society
Pages41-44
Number of pages4
ISBN (Electronic)9781605116525
DOIs
Publication statusPublished - 2014 Jan 1
Event2014 MRS Spring Meeting - San Francisco, United States
Duration: 2014 Apr 212014 Apr 25

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1675
ISSN (Print)0272-9172

Other

Other2014 MRS Spring Meeting
CountryUnited States
CitySan Francisco
Period14-04-2114-04-25

Fingerprint

Sputtering
Thermodynamic stability
thermal stability
sputtering
Magnetron sputtering
transmittance
radio frequencies
magnetron sputtering
X ray diffraction
annealing
Rapid thermal annealing
Crystallization
diffraction
ultraviolet radiation
Light emitting diodes
x rays
light emitting diodes
Annealing
crystallization
Wavelength

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Hsueh, K. P., Cheng, P. W., Lin, W. Y., Chiu, H. C., Wang, H. C., Sheu, J-K., & Yeh, Y. H. (2014). Thermal stability of post-growth-annealed Ga-doped MgZnO films grown by the RF sputtering method. In Q. Jia, D. Kumar, X. Obradors, K. K. Singh, V. Craciun, M. Guilloux-Viry, M. Jain, H. Kozuka, ... S. Mathur (Eds.), Synthesis, Characterization, and Applications of Functional Materials - Thin Films and Nanostructures (pp. 41-44). (Materials Research Society Symposium Proceedings; Vol. 1675). Materials Research Society. https://doi.org/10.1557/opl.2014.836
Hsueh, Kuang Po ; Cheng, Po Wei ; Lin, Wen Yen ; Chiu, Hsien Chin ; Wang, Hsiang Chun ; Sheu, Jinn-Kong ; Yeh, Yu Hsiang. / Thermal stability of post-growth-annealed Ga-doped MgZnO films grown by the RF sputtering method. Synthesis, Characterization, and Applications of Functional Materials - Thin Films and Nanostructures. editor / Quanxi Jia ; Dhananjay Kumar ; Xavier Obradors ; Kaushal K. Singh ; Valentin Craciun ; Maryline Guilloux-Viry ; Menka Jain ; Hiromitsu Kozuka ; Sanjay Mathur. Materials Research Society, 2014. pp. 41-44 (Materials Research Society Symposium Proceedings).
@inproceedings{7dc3ef56bb1340858cdfb2aae8201b67,
title = "Thermal stability of post-growth-annealed Ga-doped MgZnO films grown by the RF sputtering method",
abstract = "A radio-frequency magnetron sputtering technique and subsequent rapid thermal annealing (RTA) at 600, 700, 800, and 900 °C were implemented to grow high-quality Ga-doped Mg x Zn 1-x O (GMZO) epi-layers. The GMZO films were deposited using a radio-frequency magnetron sputtering system and a 4 inch ZnO/MgO/Ga 2 O 3 (75/20/5 wt {\%}) target. The Hall results, X-ray diffraction (XRD), and transmittance were determined and are reported in this paper. The Hall results indicated that the increase in mobility was likely caused by the improved crystallization in the GMZO films after thermal annealing. The XRD results revealed that Mg x Zn 1-x O (111) and MgO 2 (200) peaks were obtained in the GMZO films. The absorption edges of the as-grown and annealed GMZO films shifted toward the short wavelength of 373 ran at a transmittance of 90{\%}. According to these results, GMZO films are feasible for forming transparent contact layers for near-ultraviolet light-emitting diodes.",
author = "Hsueh, {Kuang Po} and Cheng, {Po Wei} and Lin, {Wen Yen} and Chiu, {Hsien Chin} and Wang, {Hsiang Chun} and Jinn-Kong Sheu and Yeh, {Yu Hsiang}",
year = "2014",
month = "1",
day = "1",
doi = "10.1557/opl.2014.836",
language = "English",
series = "Materials Research Society Symposium Proceedings",
publisher = "Materials Research Society",
pages = "41--44",
editor = "Quanxi Jia and Dhananjay Kumar and Xavier Obradors and Singh, {Kaushal K.} and Valentin Craciun and Maryline Guilloux-Viry and Menka Jain and Hiromitsu Kozuka and Sanjay Mathur",
booktitle = "Synthesis, Characterization, and Applications of Functional Materials - Thin Films and Nanostructures",
address = "United States",

}

Hsueh, KP, Cheng, PW, Lin, WY, Chiu, HC, Wang, HC, Sheu, J-K & Yeh, YH 2014, Thermal stability of post-growth-annealed Ga-doped MgZnO films grown by the RF sputtering method. in Q Jia, D Kumar, X Obradors, KK Singh, V Craciun, M Guilloux-Viry, M Jain, H Kozuka & S Mathur (eds), Synthesis, Characterization, and Applications of Functional Materials - Thin Films and Nanostructures. Materials Research Society Symposium Proceedings, vol. 1675, Materials Research Society, pp. 41-44, 2014 MRS Spring Meeting, San Francisco, United States, 14-04-21. https://doi.org/10.1557/opl.2014.836

Thermal stability of post-growth-annealed Ga-doped MgZnO films grown by the RF sputtering method. / Hsueh, Kuang Po; Cheng, Po Wei; Lin, Wen Yen; Chiu, Hsien Chin; Wang, Hsiang Chun; Sheu, Jinn-Kong; Yeh, Yu Hsiang.

Synthesis, Characterization, and Applications of Functional Materials - Thin Films and Nanostructures. ed. / Quanxi Jia; Dhananjay Kumar; Xavier Obradors; Kaushal K. Singh; Valentin Craciun; Maryline Guilloux-Viry; Menka Jain; Hiromitsu Kozuka; Sanjay Mathur. Materials Research Society, 2014. p. 41-44 (Materials Research Society Symposium Proceedings; Vol. 1675).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Thermal stability of post-growth-annealed Ga-doped MgZnO films grown by the RF sputtering method

AU - Hsueh, Kuang Po

AU - Cheng, Po Wei

AU - Lin, Wen Yen

AU - Chiu, Hsien Chin

AU - Wang, Hsiang Chun

AU - Sheu, Jinn-Kong

AU - Yeh, Yu Hsiang

PY - 2014/1/1

Y1 - 2014/1/1

N2 - A radio-frequency magnetron sputtering technique and subsequent rapid thermal annealing (RTA) at 600, 700, 800, and 900 °C were implemented to grow high-quality Ga-doped Mg x Zn 1-x O (GMZO) epi-layers. The GMZO films were deposited using a radio-frequency magnetron sputtering system and a 4 inch ZnO/MgO/Ga 2 O 3 (75/20/5 wt %) target. The Hall results, X-ray diffraction (XRD), and transmittance were determined and are reported in this paper. The Hall results indicated that the increase in mobility was likely caused by the improved crystallization in the GMZO films after thermal annealing. The XRD results revealed that Mg x Zn 1-x O (111) and MgO 2 (200) peaks were obtained in the GMZO films. The absorption edges of the as-grown and annealed GMZO films shifted toward the short wavelength of 373 ran at a transmittance of 90%. According to these results, GMZO films are feasible for forming transparent contact layers for near-ultraviolet light-emitting diodes.

AB - A radio-frequency magnetron sputtering technique and subsequent rapid thermal annealing (RTA) at 600, 700, 800, and 900 °C were implemented to grow high-quality Ga-doped Mg x Zn 1-x O (GMZO) epi-layers. The GMZO films were deposited using a radio-frequency magnetron sputtering system and a 4 inch ZnO/MgO/Ga 2 O 3 (75/20/5 wt %) target. The Hall results, X-ray diffraction (XRD), and transmittance were determined and are reported in this paper. The Hall results indicated that the increase in mobility was likely caused by the improved crystallization in the GMZO films after thermal annealing. The XRD results revealed that Mg x Zn 1-x O (111) and MgO 2 (200) peaks were obtained in the GMZO films. The absorption edges of the as-grown and annealed GMZO films shifted toward the short wavelength of 373 ran at a transmittance of 90%. According to these results, GMZO films are feasible for forming transparent contact layers for near-ultraviolet light-emitting diodes.

UR - http://www.scopus.com/inward/record.url?scp=84922471022&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84922471022&partnerID=8YFLogxK

U2 - 10.1557/opl.2014.836

DO - 10.1557/opl.2014.836

M3 - Conference contribution

T3 - Materials Research Society Symposium Proceedings

SP - 41

EP - 44

BT - Synthesis, Characterization, and Applications of Functional Materials - Thin Films and Nanostructures

A2 - Jia, Quanxi

A2 - Kumar, Dhananjay

A2 - Obradors, Xavier

A2 - Singh, Kaushal K.

A2 - Craciun, Valentin

A2 - Guilloux-Viry, Maryline

A2 - Jain, Menka

A2 - Kozuka, Hiromitsu

A2 - Mathur, Sanjay

PB - Materials Research Society

ER -

Hsueh KP, Cheng PW, Lin WY, Chiu HC, Wang HC, Sheu J-K et al. Thermal stability of post-growth-annealed Ga-doped MgZnO films grown by the RF sputtering method. In Jia Q, Kumar D, Obradors X, Singh KK, Craciun V, Guilloux-Viry M, Jain M, Kozuka H, Mathur S, editors, Synthesis, Characterization, and Applications of Functional Materials - Thin Films and Nanostructures. Materials Research Society. 2014. p. 41-44. (Materials Research Society Symposium Proceedings). https://doi.org/10.1557/opl.2014.836