Thermal-stability performance of a metamorphic high electron mobility transistor (MHEMT) with non-annealed Ohmic contacts

Li Yang Chen, Shiou Ying Cheng, Chien Chang Huang, Tzu Pin Chen, Tsung Han Tsai, Yi Jung Liu, Tai You Chen, Chi Hsiang Hsu, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The temperature-dependent characteristics of the non-annealed Ohmic contacts InAlAs/InGaAs MHEMT are studied and demonstrated. Due to the use of Ohmic-recess technique, the improvements on device performance including higher saturation drain current, higher transconductance, lower on-resistance, lower parasitic resistance, more linear operating regime, and superior microwave performance are obtained. The non-annealed Ohmic contacts device also shows good properties at higher operating temperature regime and the relatively thermal stable performance over the operating temperature range (300-500 K). Therefore, the studied device with non-annealed Ohmic contacts process provides the promise for high-temperature and high-performance microwave electronic device applications.

Original languageEnglish
Pages (from-to)279-282
Number of pages4
JournalSolid-State Electronics
Volume54
Issue number3
DOIs
Publication statusPublished - 2010 Mar

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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