Thermal stability performance of metamorphic high electron mobility transistors (MHEMTs)

L. Y. Chen; K. Y. Chu; T. P. Chen; C. W. Hung; T. H. Tsai; L. A. Chen; S. Y. Cheng; W. C. Liu

doi:10.1109/EDSSC.2007.4450227

Thermal stability performance of metamorphic high electron mobility transistors (MHEMTs)

L. Y. Chen, K. Y. Chu, T. P. Chen, C. W. Hung, T. H. Tsai, L. A. Chen, S. Y. Cheng, W. C. Liu

Institute of Microelectronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The thermal stability performance of double δ-doped In _0.42Al_0.58As/In_0.46Ga_0.54As metamorphic high electron mobility transistors with Au and Ti/Au metal gates are comprehensively studied and demonstrated. By evaporating the Ti/Au metal gate, the thermal stability of device characteristics are significantly improved as compared with the device with conventional metal gate (Au). Experimentally, the device with a Ti/Au metal gate simultaneously exhibits the considerably lower temperature degradation in turn-on voltage (-2.19 mV/K), breakdown voltage (-34 mV/K), impact ionization-induced gate current (1.63×10^-3 μA/mm·K), output conductance (1.23 μS/mm K), and voltage gain (-0.33 /K) as the temperature is increased from 300 to 510 K. Consequently, the studied device with a Ti/Au metal gate is a good candidate for high-speed and high-temperature applications.

Original language	English
Title of host publication	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages	721-724
Number of pages	4
DOIs	https://doi.org/10.1109/EDSSC.2007.4450227
Publication status	Published - 2007
Event	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan Duration: 2007 Dec 20 → 2007 Dec 22

Publication series

Name	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Other

Other	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Country/Territory	Taiwan
City	Tainan
Period	07-12-20 → 07-12-22

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/EDSSC.2007.4450227

Cite this

Chen, L. Y., Chu, K. Y., Chen, T. P., Hung, C. W., Tsai, T. H., Chen, L. A., Cheng, S. Y., & Liu, W. C. (2007). Thermal stability performance of metamorphic high electron mobility transistors (MHEMTs). In IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 (pp. 721-724). Article 4450227 (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). https://doi.org/10.1109/EDSSC.2007.4450227

@inproceedings{529c271792104df8b81f27ead36769a8,

title = "Thermal stability performance of metamorphic high electron mobility transistors (MHEMTs)",

abstract = "The thermal stability performance of double δ-doped In 0.42Al0.58As/In0.46Ga0.54As metamorphic high electron mobility transistors with Au and Ti/Au metal gates are comprehensively studied and demonstrated. By evaporating the Ti/Au metal gate, the thermal stability of device characteristics are significantly improved as compared with the device with conventional metal gate (Au). Experimentally, the device with a Ti/Au metal gate simultaneously exhibits the considerably lower temperature degradation in turn-on voltage (-2.19 mV/K), breakdown voltage (-34 mV/K), impact ionization-induced gate current (1.63×10-3 μA/mm·K), output conductance (1.23 μS/mm K), and voltage gain (-0.33 /K) as the temperature is increased from 300 to 510 K. Consequently, the studied device with a Ti/Au metal gate is a good candidate for high-speed and high-temperature applications.",

author = "Chen, {L. Y.} and Chu, {K. Y.} and Chen, {T. P.} and Hung, {C. W.} and Tsai, {T. H.} and Chen, {L. A.} and Cheng, {S. Y.} and Liu, {W. C.}",

year = "2007",

doi = "10.1109/EDSSC.2007.4450227",

language = "English",

isbn = "1424406374",

series = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

pages = "721--724",

booktitle = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

note = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 ; Conference date: 20-12-2007 Through 22-12-2007",

}

Chen, LY, Chu, KY, Chen, TP, Hung, CW, Tsai, TH, Chen, LA, Cheng, SY & Liu, WC 2007, Thermal stability performance of metamorphic high electron mobility transistors (MHEMTs). in IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007., 4450227, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, pp. 721-724, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, Tainan, Taiwan, 07-12-20. https://doi.org/10.1109/EDSSC.2007.4450227

Thermal stability performance of metamorphic high electron mobility transistors (MHEMTs). / Chen, L. Y.; Chu, K. Y.; Chen, T. P. et al.
IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. p. 721-724 4450227 (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Thermal stability performance of metamorphic high electron mobility transistors (MHEMTs)

AU - Chen, L. Y.

AU - Chu, K. Y.

AU - Chen, T. P.

AU - Hung, C. W.

AU - Tsai, T. H.

AU - Chen, L. A.

AU - Cheng, S. Y.

AU - Liu, W. C.

PY - 2007

Y1 - 2007

N2 - The thermal stability performance of double δ-doped In 0.42Al0.58As/In0.46Ga0.54As metamorphic high electron mobility transistors with Au and Ti/Au metal gates are comprehensively studied and demonstrated. By evaporating the Ti/Au metal gate, the thermal stability of device characteristics are significantly improved as compared with the device with conventional metal gate (Au). Experimentally, the device with a Ti/Au metal gate simultaneously exhibits the considerably lower temperature degradation in turn-on voltage (-2.19 mV/K), breakdown voltage (-34 mV/K), impact ionization-induced gate current (1.63×10-3 μA/mm·K), output conductance (1.23 μS/mm K), and voltage gain (-0.33 /K) as the temperature is increased from 300 to 510 K. Consequently, the studied device with a Ti/Au metal gate is a good candidate for high-speed and high-temperature applications.

AB - The thermal stability performance of double δ-doped In 0.42Al0.58As/In0.46Ga0.54As metamorphic high electron mobility transistors with Au and Ti/Au metal gates are comprehensively studied and demonstrated. By evaporating the Ti/Au metal gate, the thermal stability of device characteristics are significantly improved as compared with the device with conventional metal gate (Au). Experimentally, the device with a Ti/Au metal gate simultaneously exhibits the considerably lower temperature degradation in turn-on voltage (-2.19 mV/K), breakdown voltage (-34 mV/K), impact ionization-induced gate current (1.63×10-3 μA/mm·K), output conductance (1.23 μS/mm K), and voltage gain (-0.33 /K) as the temperature is increased from 300 to 510 K. Consequently, the studied device with a Ti/Au metal gate is a good candidate for high-speed and high-temperature applications.

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DO - 10.1109/EDSSC.2007.4450227

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SN - 1424406374

SN - 9781424406371

T3 - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

SP - 721

EP - 724

BT - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

T2 - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Y2 - 20 December 2007 through 22 December 2007

ER -

Chen LY, Chu KY, Chen TP, Hung CW, Tsai TH, Chen LA et al. Thermal stability performance of metamorphic high electron mobility transistors (MHEMTs). In IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. p. 721-724. 4450227. (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). doi: 10.1109/EDSSC.2007.4450227

Thermal stability performance of metamorphic high electron mobility transistors (MHEMTs)

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