Thermal stability performance of metamorphic high electron mobility transistors (MHEMTs)

L. Y. Chen, K. Y. Chu, T. P. Chen, C. W. Hung, T. H. Tsai, L. A. Chen, S. Y. Cheng, Wen-Chau Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The thermal stability performance of double δ-doped In 0.42Al0.58As/In0.46Ga0.54As metamorphic high electron mobility transistors with Au and Ti/Au metal gates are comprehensively studied and demonstrated. By evaporating the Ti/Au metal gate, the thermal stability of device characteristics are significantly improved as compared with the device with conventional metal gate (Au). Experimentally, the device with a Ti/Au metal gate simultaneously exhibits the considerably lower temperature degradation in turn-on voltage (-2.19 mV/K), breakdown voltage (-34 mV/K), impact ionization-induced gate current (1.63×10-3 μA/mm·K), output conductance (1.23 μS/mm K), and voltage gain (-0.33 /K) as the temperature is increased from 300 to 510 K. Consequently, the studied device with a Ti/Au metal gate is a good candidate for high-speed and high-temperature applications.

Original languageEnglish
Title of host publicationIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages721-724
Number of pages4
DOIs
Publication statusPublished - 2007 Dec 1
EventIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan
Duration: 2007 Dec 202007 Dec 22

Publication series

NameIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Other

OtherIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
CountryTaiwan
CityTainan
Period07-12-2007-12-22

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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