TY - JOUR
T1 - Thermal-stable characteristics of metamorphic double δ-doped heterostructure field-effect transistor
AU - Huang, Dong Hai
AU - Hsu, Wei Chou
AU - Lin, Yu Shyan
AU - Huang, Jun Chin
PY - 2007/10/9
Y1 - 2007/10/9
N2 - In this study, we demonstrate the thermal-stable characteristics of a metamorphic double δ-doped heterostructure field-effect transistor (MDDFET). The variations in drain current density and extrinsic transconductance of the studied device are as low as +0.3 and -2.5% from 300 to 420K. When the temperature increases from 360 to 380K, positive changes of transconductance and drain current are observed, which is different from that observed in most FETs. The thermal-stable characteristics can be attributed to the coupled wave function, inducing a larger carrier distribution in the undoped high-speed In0.6Ga0.6As region of the In0.5Ga 0.5As/δ+/In0.5Ga0.5As/In 0.6Ga0.4As/In0.5Ga0.5As/ δ+/In0.5Ga0.5As channel when temperature increases.
AB - In this study, we demonstrate the thermal-stable characteristics of a metamorphic double δ-doped heterostructure field-effect transistor (MDDFET). The variations in drain current density and extrinsic transconductance of the studied device are as low as +0.3 and -2.5% from 300 to 420K. When the temperature increases from 360 to 380K, positive changes of transconductance and drain current are observed, which is different from that observed in most FETs. The thermal-stable characteristics can be attributed to the coupled wave function, inducing a larger carrier distribution in the undoped high-speed In0.6Ga0.6As region of the In0.5Ga 0.5As/δ+/In0.5Ga0.5As/In 0.6Ga0.4As/In0.5Ga0.5As/ δ+/In0.5Ga0.5As channel when temperature increases.
UR - http://www.scopus.com/inward/record.url?scp=35348914257&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=35348914257&partnerID=8YFLogxK
U2 - 10.1143/JJAP.46.6595
DO - 10.1143/JJAP.46.6595
M3 - Article
AN - SCOPUS:35348914257
SN - 0021-4922
VL - 46
SP - 6595
EP - 6597
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 10 A
ER -