Thermal-stable characteristics of metamorphic double δ-doped heterostructure field-effect transistor

Dong Hai Huang; Wei Chou Hsu; Yu Shyan Lin; Jun Chin Huang

doi:10.1143/JJAP.46.6595

Thermal-stable characteristics of metamorphic double δ-doped heterostructure field-effect transistor

Dong Hai Huang
, Wei Chou Hsu
, Yu Shyan Lin
, Jun Chin Huang

Research output: Contribution to journal › Article › peer-review

Abstract

In this study, we demonstrate the thermal-stable characteristics of a metamorphic double δ-doped heterostructure field-effect transistor (MDDFET). The variations in drain current density and extrinsic transconductance of the studied device are as low as +0.3 and -2.5% from 300 to 420K. When the temperature increases from 360 to 380K, positive changes of transconductance and drain current are observed, which is different from that observed in most FETs. The thermal-stable characteristics can be attributed to the coupled wave function, inducing a larger carrier distribution in the undoped high-speed In_0.6Ga_0.6As region of the In_0.5Ga _0.5As/δ⁺/In_0.5Ga_0.5As/In _0.6Ga_0.4As/In_0.5Ga_0.5As/ δ⁺/In_0.5Ga_0.5As channel when temperature increases.

Original language	English
Pages (from-to)	6595-6597
Number of pages	3
Journal	Japanese Journal of Applied Physics
Volume	46
Issue number	10 A
DOIs	https://doi.org/10.1143/JJAP.46.6595
Publication status	Published - 2007 Oct 9

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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title = "Thermal-stable characteristics of metamorphic double δ-doped heterostructure field-effect transistor",

abstract = "In this study, we demonstrate the thermal-stable characteristics of a metamorphic double δ-doped heterostructure field-effect transistor (MDDFET). The variations in drain current density and extrinsic transconductance of the studied device are as low as +0.3 and -2.5\% from 300 to 420K. When the temperature increases from 360 to 380K, positive changes of transconductance and drain current are observed, which is different from that observed in most FETs. The thermal-stable characteristics can be attributed to the coupled wave function, inducing a larger carrier distribution in the undoped high-speed In0.6Ga0.6As region of the In0.5Ga 0.5As/δ+/In0.5Ga0.5As/In 0.6Ga0.4As/In0.5Ga0.5As/ δ+/In0.5Ga0.5As channel when temperature increases.",

author = "Huang, \{Dong Hai\} and Hsu, \{Wei Chou\} and Lin, \{Yu Shyan\} and Huang, \{Jun Chin\}",

year = "2007",

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doi = "10.1143/JJAP.46.6595",

language = "English",

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journal = "Japanese Journal of Applied Physics",

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publisher = "Institute of Physics",

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TY - JOUR

T1 - Thermal-stable characteristics of metamorphic double δ-doped heterostructure field-effect transistor

AU - Huang, Dong Hai

AU - Hsu, Wei Chou

AU - Lin, Yu Shyan

AU - Huang, Jun Chin

PY - 2007/10/9

Y1 - 2007/10/9

N2 - In this study, we demonstrate the thermal-stable characteristics of a metamorphic double δ-doped heterostructure field-effect transistor (MDDFET). The variations in drain current density and extrinsic transconductance of the studied device are as low as +0.3 and -2.5% from 300 to 420K. When the temperature increases from 360 to 380K, positive changes of transconductance and drain current are observed, which is different from that observed in most FETs. The thermal-stable characteristics can be attributed to the coupled wave function, inducing a larger carrier distribution in the undoped high-speed In0.6Ga0.6As region of the In0.5Ga 0.5As/δ+/In0.5Ga0.5As/In 0.6Ga0.4As/In0.5Ga0.5As/ δ+/In0.5Ga0.5As channel when temperature increases.

AB - In this study, we demonstrate the thermal-stable characteristics of a metamorphic double δ-doped heterostructure field-effect transistor (MDDFET). The variations in drain current density and extrinsic transconductance of the studied device are as low as +0.3 and -2.5% from 300 to 420K. When the temperature increases from 360 to 380K, positive changes of transconductance and drain current are observed, which is different from that observed in most FETs. The thermal-stable characteristics can be attributed to the coupled wave function, inducing a larger carrier distribution in the undoped high-speed In0.6Ga0.6As region of the In0.5Ga 0.5As/δ+/In0.5Ga0.5As/In 0.6Ga0.4As/In0.5Ga0.5As/ δ+/In0.5Ga0.5As channel when temperature increases.

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SN - 0021-4922

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EP - 6597

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 10 A

ER -

Thermal-stable characteristics of metamorphic double δ-doped heterostructure field-effect transistor

Abstract

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