TY - JOUR
T1 - Thermalelectro-feedback model for multi-emitter finger power heterojunction bipolar transistor Part II
T2 - Current crush phenomenon
AU - Yarn, K. F.
AU - Wang, Y. H.
AU - Houng, M. P.
AU - Lew, B. K.
PY - 2006/9/1
Y1 - 2006/9/1
N2 - Current crush phenomenon, a heat-related mechanism that is commonly observed in experimental I - V characteristic of power HBT, is explained favourably by the thermoelectro-feedback model. A feasible method with proper device geometry or layout to suppress this undesirable phenomenon is provided and experimentally verified.
AB - Current crush phenomenon, a heat-related mechanism that is commonly observed in experimental I - V characteristic of power HBT, is explained favourably by the thermoelectro-feedback model. A feasible method with proper device geometry or layout to suppress this undesirable phenomenon is provided and experimentally verified.
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U2 - 10.1080/08827510410001694941
DO - 10.1080/08827510410001694941
M3 - Article
AN - SCOPUS:33745650930
SN - 0020-7217
VL - 93
SP - 581
EP - 588
JO - International Journal of Electronics
JF - International Journal of Electronics
IS - 9
ER -