Thermalelectro-feedback model for multi-emitter finger power heterojunction bipolar transistor Part II: Current crush phenomenon

K. F. Yarn; Y. H. Wang; M. P. Houng; B. K. Lew

doi:10.1080/08827510410001694941

Thermalelectro-feedback model for multi-emitter finger power heterojunction bipolar transistor Part II: Current crush phenomenon

K. F. Yarn
, Y. H. Wang
, M. P. Houng
, B. K. Lew

Research output: Contribution to journal › Article › peer-review

Abstract

Current crush phenomenon, a heat-related mechanism that is commonly observed in experimental I - V characteristic of power HBT, is explained favourably by the thermoelectro-feedback model. A feasible method with proper device geometry or layout to suppress this undesirable phenomenon is provided and experimentally verified.

Original language	English
Pages (from-to)	581-588
Number of pages	8
Journal	International Journal of Electronics
Volume	93
Issue number	9
DOIs	https://doi.org/10.1080/08827510410001694941
Publication status	Published - 2006 Sept 1

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1080/08827510410001694941

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title = "Thermalelectro-feedback model for multi-emitter finger power heterojunction bipolar transistor Part II: Current crush phenomenon",

abstract = "Current crush phenomenon, a heat-related mechanism that is commonly observed in experimental I - V characteristic of power HBT, is explained favourably by the thermoelectro-feedback model. A feasible method with proper device geometry or layout to suppress this undesirable phenomenon is provided and experimentally verified.",

author = "Yarn, \{K. F.\} and Wang, \{Y. H.\} and Houng, \{M. P.\} and Lew, \{B. K.\}",

year = "2006",

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T2 - Current crush phenomenon

AU - Yarn, K. F.

AU - Wang, Y. H.

AU - Houng, M. P.

AU - Lew, B. K.

PY - 2006/9/1

Y1 - 2006/9/1

N2 - Current crush phenomenon, a heat-related mechanism that is commonly observed in experimental I - V characteristic of power HBT, is explained favourably by the thermoelectro-feedback model. A feasible method with proper device geometry or layout to suppress this undesirable phenomenon is provided and experimentally verified.

AB - Current crush phenomenon, a heat-related mechanism that is commonly observed in experimental I - V characteristic of power HBT, is explained favourably by the thermoelectro-feedback model. A feasible method with proper device geometry or layout to suppress this undesirable phenomenon is provided and experimentally verified.

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DO - 10.1080/08827510410001694941

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EP - 588

JO - International Journal of Electronics

JF - International Journal of Electronics

IS - 9

ER -

Thermalelectro-feedback model for multi-emitter finger power heterojunction bipolar transistor Part II: Current crush phenomenon

Abstract

All Science Journal Classification (ASJC) codes

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