In this paper, we describe the change in barrier heights (φB) and ideality factors (n) of Ni/Au contacts to p-GaN determined from current-voltage measurements as a result of (a) rapid thermal annealing between 400-700 °C under flowing nitrogen, and (b) testing at temperatures of 20-300 °C. The lowest barrier height and ideality factor values were obtained from samples annealed at 500-600 °C. These results provide supporting evidence that thermal processing helps to remove contaminants at the contact-GaN interface, thus decreasing effective barrier height and consequently, contact resistance.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry