Thermally induced variation in barrier height and ideality factor of Ni/Au contacts to p-GaN

D. L. Hibbard, R. W. Chuang, Y. S. Zhao, C. L. Jensen, H. P. Lee, Z. J. Dong, R. Shih, M. Bremser

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Abstract

In this paper, we describe the change in barrier heights (φB) and ideality factors (n) of Ni/Au contacts to p-GaN determined from current-voltage measurements as a result of (a) rapid thermal annealing between 400-700 °C under flowing nitrogen, and (b) testing at temperatures of 20-300 °C. The lowest barrier height and ideality factor values were obtained from samples annealed at 500-600 °C. These results provide supporting evidence that thermal processing helps to remove contaminants at the contact-GaN interface, thus decreasing effective barrier height and consequently, contact resistance.

Original languageEnglish
Pages (from-to)291-296
Number of pages6
JournalJournal of Electronic Materials
Volume29
Issue number3
DOIs
Publication statusPublished - 2000 Mar

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Hibbard, D. L., Chuang, R. W., Zhao, Y. S., Jensen, C. L., Lee, H. P., Dong, Z. J., Shih, R., & Bremser, M. (2000). Thermally induced variation in barrier height and ideality factor of Ni/Au contacts to p-GaN. Journal of Electronic Materials, 29(3), 291-296. https://doi.org/10.1007/s11664-000-0065-9