Thermally stable Ir/n-ZnO Schottky diodes

S. J. Young, S. J. Chang, L. W. Ji, T. H. Meen, C. H. Hsiao, K. W. Liu, K. J. Chen, Z. S. Hu

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

Temperature-dependent characteristics of ZnO Schottky diodes with Iridium (Ir) contact electrodes were investigated. Using Norde model, it was found that the effectively Schottky barrier heights of Ir on n-ZnO were around 0.837, 0.829, 0.801, 0.750 and 0.719 eV when measured at 25, 30, 50, 100 and 150 °C, respectively. Using Cheung's method, it was found that Schottky barrier heights between Ir and the n-ZnO were 0.824, 0.823, 0.789, 0.743 and 0.740 eV when measured at 25, 30, 50, 100 and 150 °C, respectively. The large Schottky barrier heights suggest that Ir is a potentially useful material for ZnO-based ultraviolet Schottky barrier photodetectors and metal-semiconductor- metal photodetectors.

Original languageEnglish
Pages (from-to)113-116
Number of pages4
JournalMicroelectronic Engineering
Volume88
Issue number1
DOIs
Publication statusPublished - 2011 Jan

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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