Thermally stable Ir/n-ZnO Schottky diodes

S. J. Young; S. J. Chang; L. W. Ji; T. H. Meen; C. H. Hsiao; K. W. Liu; K. J. Chen; Z. S. Hu

doi:10.1016/j.mee.2010.09.010

Thermally stable Ir/n-ZnO Schottky diodes

S. J. Young, S. J. Chang, L. W. Ji, T. H. Meen, C. H. Hsiao, K. W. Liu, K. J. Chen, Z. S. Hu

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Temperature-dependent characteristics of ZnO Schottky diodes with Iridium (Ir) contact electrodes were investigated. Using Norde model, it was found that the effectively Schottky barrier heights of Ir on n-ZnO were around 0.837, 0.829, 0.801, 0.750 and 0.719 eV when measured at 25, 30, 50, 100 and 150 °C, respectively. Using Cheung's method, it was found that Schottky barrier heights between Ir and the n-ZnO were 0.824, 0.823, 0.789, 0.743 and 0.740 eV when measured at 25, 30, 50, 100 and 150 °C, respectively. The large Schottky barrier heights suggest that Ir is a potentially useful material for ZnO-based ultraviolet Schottky barrier photodetectors and metal-semiconductor- metal photodetectors.

Original language	English
Pages (from-to)	113-116
Number of pages	4
Journal	Microelectronic Engineering
Volume	88
Issue number	1
DOIs	https://doi.org/10.1016/j.mee.2010.09.010
Publication status	Published - 2011 Jan

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mee.2010.09.010

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title = "Thermally stable Ir/n-ZnO Schottky diodes",

abstract = "Temperature-dependent characteristics of ZnO Schottky diodes with Iridium (Ir) contact electrodes were investigated. Using Norde model, it was found that the effectively Schottky barrier heights of Ir on n-ZnO were around 0.837, 0.829, 0.801, 0.750 and 0.719 eV when measured at 25, 30, 50, 100 and 150 °C, respectively. Using Cheung's method, it was found that Schottky barrier heights between Ir and the n-ZnO were 0.824, 0.823, 0.789, 0.743 and 0.740 eV when measured at 25, 30, 50, 100 and 150 °C, respectively. The large Schottky barrier heights suggest that Ir is a potentially useful material for ZnO-based ultraviolet Schottky barrier photodetectors and metal-semiconductor- metal photodetectors.",

author = "Young, {S. J.} and Chang, {S. J.} and Ji, {L. W.} and Meen, {T. H.} and Hsiao, {C. H.} and Liu, {K. W.} and Chen, {K. J.} and Hu, {Z. S.}",

note = "Funding Information: This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan (D97-2700). This work was also in part supported by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education. This work was also supported by National Science Council of Taiwan under Contract numbers NSC 99-2218-E-150-003- and NSC 99-2622-E-150-012-CC3.",

year = "2011",

month = jan,

doi = "10.1016/j.mee.2010.09.010",

language = "English",

volume = "88",

pages = "113--116",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "1",

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T1 - Thermally stable Ir/n-ZnO Schottky diodes

AU - Young, S. J.

AU - Chang, S. J.

AU - Ji, L. W.

AU - Meen, T. H.

AU - Hsiao, C. H.

AU - Liu, K. W.

AU - Chen, K. J.

AU - Hu, Z. S.

N1 - Funding Information: This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan (D97-2700). This work was also in part supported by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education. This work was also supported by National Science Council of Taiwan under Contract numbers NSC 99-2218-E-150-003- and NSC 99-2622-E-150-012-CC3.

PY - 2011/1

Y1 - 2011/1

N2 - Temperature-dependent characteristics of ZnO Schottky diodes with Iridium (Ir) contact electrodes were investigated. Using Norde model, it was found that the effectively Schottky barrier heights of Ir on n-ZnO were around 0.837, 0.829, 0.801, 0.750 and 0.719 eV when measured at 25, 30, 50, 100 and 150 °C, respectively. Using Cheung's method, it was found that Schottky barrier heights between Ir and the n-ZnO were 0.824, 0.823, 0.789, 0.743 and 0.740 eV when measured at 25, 30, 50, 100 and 150 °C, respectively. The large Schottky barrier heights suggest that Ir is a potentially useful material for ZnO-based ultraviolet Schottky barrier photodetectors and metal-semiconductor- metal photodetectors.

AB - Temperature-dependent characteristics of ZnO Schottky diodes with Iridium (Ir) contact electrodes were investigated. Using Norde model, it was found that the effectively Schottky barrier heights of Ir on n-ZnO were around 0.837, 0.829, 0.801, 0.750 and 0.719 eV when measured at 25, 30, 50, 100 and 150 °C, respectively. Using Cheung's method, it was found that Schottky barrier heights between Ir and the n-ZnO were 0.824, 0.823, 0.789, 0.743 and 0.740 eV when measured at 25, 30, 50, 100 and 150 °C, respectively. The large Schottky barrier heights suggest that Ir is a potentially useful material for ZnO-based ultraviolet Schottky barrier photodetectors and metal-semiconductor- metal photodetectors.

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Thermally stable Ir/n-ZnO Schottky diodes

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