Abstract
Temperature-dependent characteristics of ZnO Schottky diodes with Iridium (Ir) contact electrodes were investigated. Using Norde model, it was found that the effectively Schottky barrier heights of Ir on n-ZnO were around 0.837, 0.829, 0.801, 0.750 and 0.719 eV when measured at 25, 30, 50, 100 and 150 °C, respectively. Using Cheung's method, it was found that Schottky barrier heights between Ir and the n-ZnO were 0.824, 0.823, 0.789, 0.743 and 0.740 eV when measured at 25, 30, 50, 100 and 150 °C, respectively. The large Schottky barrier heights suggest that Ir is a potentially useful material for ZnO-based ultraviolet Schottky barrier photodetectors and metal-semiconductor- metal photodetectors.
| Original language | English |
|---|---|
| Pages (from-to) | 113-116 |
| Number of pages | 4 |
| Journal | Microelectronic Engineering |
| Volume | 88 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2011 Jan 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
Fingerprint Dive into the research topics of 'Thermally stable Ir/n-ZnO Schottky diodes'. Together they form a unique fingerprint.
Cite this
Young, S. J., Chang, S. J., Ji, L. W., Meen, T. H., Hsiao, C. H., Liu, K. W., Chen, K. J., & Hu, Z. S. (2011). Thermally stable Ir/n-ZnO Schottky diodes. Microelectronic Engineering, 88(1), 113-116. https://doi.org/10.1016/j.mee.2010.09.010