TY - JOUR
T1 - Thermo-mechanical behavior of thick PECVD oxide films for power MEMS applications
AU - Zhang, Xin
AU - Chen, Kuo Shen
AU - Spearing, S. Mark
N1 - Funding Information:
The authors are grateful to Professors R. Ghodssi and W. Ye for their insightful suggestions, to Dr. A. Ayon for providing an excellent SEM picture of micro-heat exchanger, to J.Y. Chen and S.Y. Lin for their help in FEM modeling, to L. Ho for his help during fabrication and testing, and to all the members of the MIT microengine team for their help and support. This work is supported by the Army Research Office (DAAH04-95-1-0093) under Dr. R. Paur, DARPA (DAAG55-98-1-0365, DABT63-98-C-0004) under Dr. R. Nowack and Dr. J. McMichael, and National Science Council of Taiwan (NSC-88-2212-006-035).
PY - 2003/1/15
Y1 - 2003/1/15
N2 - This paper presents residual stress characterization and fracture analysis of thick plasma-enhanced chemical vapor deposition (PECVD) oxide films. The motivation for this work is to elucidate the factors contributing to residual stress, deformation and fracture of silicon oxide films so as to refine the microfabrication process for power microelectromechanical systems (MEMS) manufacturing. The stress-temperature behavior of PECVD oxide films during annealing was studied. Analyses of residual stress relaxation, intrinsic stress generation, and the large deformation response of wafers were carried out. Preliminary experimental observations and estimates of oxide fracture were also provided.
AB - This paper presents residual stress characterization and fracture analysis of thick plasma-enhanced chemical vapor deposition (PECVD) oxide films. The motivation for this work is to elucidate the factors contributing to residual stress, deformation and fracture of silicon oxide films so as to refine the microfabrication process for power microelectromechanical systems (MEMS) manufacturing. The stress-temperature behavior of PECVD oxide films during annealing was studied. Analyses of residual stress relaxation, intrinsic stress generation, and the large deformation response of wafers were carried out. Preliminary experimental observations and estimates of oxide fracture were also provided.
UR - https://www.scopus.com/pages/publications/0037438916
UR - https://www.scopus.com/pages/publications/0037438916#tab=citedBy
U2 - 10.1016/S0924-4247(02)00343-6
DO - 10.1016/S0924-4247(02)00343-6
M3 - Article
AN - SCOPUS:0037438916
SN - 0924-4247
VL - 103
SP - 263
EP - 270
JO - Sensors and Actuators, A: Physical
JF - Sensors and Actuators, A: Physical
IS - 1-2
ER -