TY - JOUR
T1 - Thermodynamic sensing mechanisms of AlGaN-based metal/reactive insulator/semiconductor-type hydrogen sensors
AU - Lee, Hsin Ying
AU - Lee, Ching Ting
N1 - Funding Information:
Manuscript received August 29, 2011; revised October 15, 2011; accepted October 17, 2011. Date of publication October 24, 2011; date of current version April 13, 2012. This work was supported by the Advanced Optoelectronic Technology Center of the National Cheng Kung University and the National Science Council of Taiwan, Republic of China, under Contract NSC-99-2221-E-006-208-MY3 and Contract NSC-100-3113-E-492-001. The associate editor coordinating the review of this manuscript and approving it for publication was Prof. Istvan Barsony.
PY - 2012
Y1 - 2012
N2 - Thermodynamic sensing mechanisms of Pt/reactive insulator/AlGaN hydrogen sensors were studied. The reactive insulator layer of mixed Ga 2O 3 and Al 2O 3 was grown directly from the AlGaN layer using a photoelectrochemical oxidation method. The current of the hydrogen sensors exhibited considerable response under forward bias in a hydrogen ambient at the temperature range between 350 K and 550 K. Based on the steady-state analysis, the adsorption enthalpy of -11.64kJ/mol for hydrogen adsorbed at the interface and in the reactive insulator layer was obtained. Because the kinetic reaction was an exothermic action, the hydrogen response decreased with an increase of operating temperatures. From the thermodynamic kinetic analysis of transient responses, the activation energy was 3.57 kJ/mol. The Pt/reactive insulator/AlGaN hydrogen sensors exhibited high performance at various temperatures.
AB - Thermodynamic sensing mechanisms of Pt/reactive insulator/AlGaN hydrogen sensors were studied. The reactive insulator layer of mixed Ga 2O 3 and Al 2O 3 was grown directly from the AlGaN layer using a photoelectrochemical oxidation method. The current of the hydrogen sensors exhibited considerable response under forward bias in a hydrogen ambient at the temperature range between 350 K and 550 K. Based on the steady-state analysis, the adsorption enthalpy of -11.64kJ/mol for hydrogen adsorbed at the interface and in the reactive insulator layer was obtained. Because the kinetic reaction was an exothermic action, the hydrogen response decreased with an increase of operating temperatures. From the thermodynamic kinetic analysis of transient responses, the activation energy was 3.57 kJ/mol. The Pt/reactive insulator/AlGaN hydrogen sensors exhibited high performance at various temperatures.
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U2 - 10.1109/JSEN.2011.2173331
DO - 10.1109/JSEN.2011.2173331
M3 - Article
AN - SCOPUS:84859910445
SN - 1530-437X
VL - 12
SP - 1450
EP - 1454
JO - IEEE Sensors Journal
JF - IEEE Sensors Journal
IS - 5
M1 - 6059470
ER -