Thermoelectric properties of the cubic AgPb10SbTe12

Kuei Fang Hsu; Sim Loo; Wet Chen; Ctirad Uher; Tim Hogan; Mercouri G. Kanatzidis

doi:10.1557/proc-793-s6.3

Thermoelectric properties of the cubic AgPb₁₀SbTe₁₂

Kuei Fang Hsu, Sim Loo, Wet Chen, Ctirad Uher, Tim Hogan, Mercouri G. Kanatzidis

Department of Chemistry

Research output: Contribution to journal › Conference article › peer-review

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Abstract

AgPb₁₀SbTe₁₂ is one member of the cubic family of materials AgPb_mSbTe_m+2, which adopts NaCl structure where Ag, Pb and Sb atoms occupy the Na site and Te atoms occupy the Cl site. Ingots of this compound were prepared by a solid state reaction for thermoelectric measurements. AgPb₁₀SbTe₁₂ is a narrow band gap semiconductor with E_g∼0.26 eV. In order to optimize the ZT of this member, compositions with deficiency of Ag and Bi-substitution were examined and found to exhibit enhanced power factor at 300 K. The Bi-substituted ingot had ZT∼0.39 at 300 K and ZT∼0.68 at 400 K. Carrier concentration and the mobility measurements are reported.

Original language	English
Pages (from-to)	155-160
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	793
DOIs	https://doi.org/10.1557/proc-793-s6.3
Publication status	Published - 2003
Event	Thermoelectric Materials 2003 - Research and Applications - Boston, MA., United States Duration: 2003 Dec 1 → 2003 Dec 3

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Thermoelectric properties of the cubic AgPb10SbTe12",

abstract = "AgPb10SbTe12 is one member of the cubic family of materials AgPbmSbTem+2, which adopts NaCl structure where Ag, Pb and Sb atoms occupy the Na site and Te atoms occupy the Cl site. Ingots of this compound were prepared by a solid state reaction for thermoelectric measurements. AgPb10SbTe12 is a narrow band gap semiconductor with Eg∼0.26 eV. In order to optimize the ZT of this member, compositions with deficiency of Ag and Bi-substitution were examined and found to exhibit enhanced power factor at 300 K. The Bi-substituted ingot had ZT∼0.39 at 300 K and ZT∼0.68 at 400 K. Carrier concentration and the mobility measurements are reported.",

author = "Hsu, {Kuei Fang} and Sim Loo and Wet Chen and Ctirad Uher and Tim Hogan and Kanatzidis, {Mercouri G.}",

year = "2003",

doi = "10.1557/proc-793-s6.3",

language = "English",

volume = "793",

pages = "155--160",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Thermoelectric Materials 2003 - Research and Applications ; Conference date: 01-12-2003 Through 03-12-2003",

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TY - JOUR

T1 - Thermoelectric properties of the cubic AgPb10SbTe12

AU - Hsu, Kuei Fang

AU - Loo, Sim

AU - Chen, Wet

AU - Uher, Ctirad

AU - Hogan, Tim

AU - Kanatzidis, Mercouri G.

PY - 2003

Y1 - 2003

N2 - AgPb10SbTe12 is one member of the cubic family of materials AgPbmSbTem+2, which adopts NaCl structure where Ag, Pb and Sb atoms occupy the Na site and Te atoms occupy the Cl site. Ingots of this compound were prepared by a solid state reaction for thermoelectric measurements. AgPb10SbTe12 is a narrow band gap semiconductor with Eg∼0.26 eV. In order to optimize the ZT of this member, compositions with deficiency of Ag and Bi-substitution were examined and found to exhibit enhanced power factor at 300 K. The Bi-substituted ingot had ZT∼0.39 at 300 K and ZT∼0.68 at 400 K. Carrier concentration and the mobility measurements are reported.

AB - AgPb10SbTe12 is one member of the cubic family of materials AgPbmSbTem+2, which adopts NaCl structure where Ag, Pb and Sb atoms occupy the Na site and Te atoms occupy the Cl site. Ingots of this compound were prepared by a solid state reaction for thermoelectric measurements. AgPb10SbTe12 is a narrow band gap semiconductor with Eg∼0.26 eV. In order to optimize the ZT of this member, compositions with deficiency of Ag and Bi-substitution were examined and found to exhibit enhanced power factor at 300 K. The Bi-substituted ingot had ZT∼0.39 at 300 K and ZT∼0.68 at 400 K. Carrier concentration and the mobility measurements are reported.

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U2 - 10.1557/proc-793-s6.3

DO - 10.1557/proc-793-s6.3

M3 - Conference article

AN - SCOPUS:2442528703

SN - 0272-9172

VL - 793

SP - 155

EP - 160

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Thermoelectric Materials 2003 - Research and Applications

Y2 - 1 December 2003 through 3 December 2003

ER -

Thermoelectric properties of the cubic AgPb₁₀SbTe₁₂

Abstract

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