TY - JOUR
T1 - Thickness dependence of conductivity in Bi2Se3 topological insulator
AU - Chistyakov, V. V.
AU - Domozhirova, A. N.
AU - Huang, J. C.A.
AU - Marchenkov, V. V.
N1 - Publisher Copyright:
© Published under licence by IOP Publishing Ltd.
PY - 2019/11/28
Y1 - 2019/11/28
N2 - The electrical resistivity of thin films of a topological insulator of Bi2Se3 with a thickness of 10 nm to 75 nm, single crystal of Bi2Se3 with thickness of 0.65 mm in the temperature range from 4.2 to 300 K was measured. A size effect in the electrical conductivity of Bi2Se3 films was observed, i.e. linear dependence of the conductivity of the sample on its inverse thickness. It was suggested that similar effects should be observed in other TIs and systems with non-uniform distribution of direct current over the cross section of the sample.
AB - The electrical resistivity of thin films of a topological insulator of Bi2Se3 with a thickness of 10 nm to 75 nm, single crystal of Bi2Se3 with thickness of 0.65 mm in the temperature range from 4.2 to 300 K was measured. A size effect in the electrical conductivity of Bi2Se3 films was observed, i.e. linear dependence of the conductivity of the sample on its inverse thickness. It was suggested that similar effects should be observed in other TIs and systems with non-uniform distribution of direct current over the cross section of the sample.
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U2 - 10.1088/1742-6596/1389/1/012051
DO - 10.1088/1742-6596/1389/1/012051
M3 - Conference article
AN - SCOPUS:85076753206
SN - 1742-6588
VL - 1389
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
IS - 1
M1 - 012051
T2 - 7th Euro-Asian Symposium on Trends in Magnetism, EASTMAG 2019
Y2 - 8 September 2019 through 13 September 2019
ER -