Thickness dependence of conductivity in Bi2Se3 topological insulator

V. V. Chistyakov, A. N. Domozhirova, J. C.A. Huang, V. V. Marchenkov

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)


The electrical resistivity of thin films of a topological insulator of Bi2Se3 with a thickness of 10 nm to 75 nm, single crystal of Bi2Se3 with thickness of 0.65 mm in the temperature range from 4.2 to 300 K was measured. A size effect in the electrical conductivity of Bi2Se3 films was observed, i.e. linear dependence of the conductivity of the sample on its inverse thickness. It was suggested that similar effects should be observed in other TIs and systems with non-uniform distribution of direct current over the cross section of the sample.

Original languageEnglish
Article number012051
JournalJournal of Physics: Conference Series
Issue number1
Publication statusPublished - 2019 Nov 28
Event7th Euro-Asian Symposium on Trends in Magnetism, EASTMAG 2019 - Ekaterinburg, Russian Federation
Duration: 2019 Sep 82019 Sep 13

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


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