Thickness effect on the diffusion barrier properties of ZrN in Cu/ZrN/Si systems

Cheng Shi Chen, Chuan Pu Liu, Heng Ghieh Yang, Chi Y.A. Tsao

Research output: Contribution to conferencePaper

Abstract

Stoichiometric ZrN films were grown on Si (100) substrates using reactive dc magnetron sputtering and the resistivity and the lattice parameter of these films were studied by post-annealing up to 900°C. Upon annealing, not only increased grain size results but also is the higher mobility by relieving internal stress and by decreasing disorder in the lattice. Therefore, the effect of the annealing on the ZrN films is to decrease their resistivity. Subsequently, the diffusion behavior of the constituent species in the Cu/ZrN/ Si stacks was examined by annealing. The diffusion coefficient and activation energy of Cu in the ZrN barrier were determined with various ZrN thickness. The enhanced barrier properties for the thicker ZrN film was explained in terms of its microstructure.

Original languageEnglish
Pages146-153
Number of pages8
Publication statusPublished - 2003 Jan 1
EventCopper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium - Orlando, FL, United States
Duration: 2003 Oct 122003 Oct 17

Other

OtherCopper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium
CountryUnited States
CityOrlando, FL
Period03-10-1203-10-17

Fingerprint

Diffusion barriers
Annealing
Reactive sputtering
Thick films
Magnetron sputtering
Lattice constants
Residual stresses
Activation energy
Microstructure
Substrates

All Science Journal Classification (ASJC) codes

  • Electrochemistry

Cite this

Chen, C. S., Liu, C. P., Yang, H. G., & Tsao, C. Y. A. (2003). Thickness effect on the diffusion barrier properties of ZrN in Cu/ZrN/Si systems. 146-153. Paper presented at Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium, Orlando, FL, United States.
Chen, Cheng Shi ; Liu, Chuan Pu ; Yang, Heng Ghieh ; Tsao, Chi Y.A. / Thickness effect on the diffusion barrier properties of ZrN in Cu/ZrN/Si systems. Paper presented at Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium, Orlando, FL, United States.8 p.
@conference{f4ed9430fc0943e586071b86371454ec,
title = "Thickness effect on the diffusion barrier properties of ZrN in Cu/ZrN/Si systems",
abstract = "Stoichiometric ZrN films were grown on Si (100) substrates using reactive dc magnetron sputtering and the resistivity and the lattice parameter of these films were studied by post-annealing up to 900°C. Upon annealing, not only increased grain size results but also is the higher mobility by relieving internal stress and by decreasing disorder in the lattice. Therefore, the effect of the annealing on the ZrN films is to decrease their resistivity. Subsequently, the diffusion behavior of the constituent species in the Cu/ZrN/ Si stacks was examined by annealing. The diffusion coefficient and activation energy of Cu in the ZrN barrier were determined with various ZrN thickness. The enhanced barrier properties for the thicker ZrN film was explained in terms of its microstructure.",
author = "Chen, {Cheng Shi} and Liu, {Chuan Pu} and Yang, {Heng Ghieh} and Tsao, {Chi Y.A.}",
year = "2003",
month = "1",
day = "1",
language = "English",
pages = "146--153",
note = "Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium ; Conference date: 12-10-2003 Through 17-10-2003",

}

Chen, CS, Liu, CP, Yang, HG & Tsao, CYA 2003, 'Thickness effect on the diffusion barrier properties of ZrN in Cu/ZrN/Si systems', Paper presented at Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium, Orlando, FL, United States, 03-10-12 - 03-10-17 pp. 146-153.

Thickness effect on the diffusion barrier properties of ZrN in Cu/ZrN/Si systems. / Chen, Cheng Shi; Liu, Chuan Pu; Yang, Heng Ghieh; Tsao, Chi Y.A.

2003. 146-153 Paper presented at Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium, Orlando, FL, United States.

Research output: Contribution to conferencePaper

TY - CONF

T1 - Thickness effect on the diffusion barrier properties of ZrN in Cu/ZrN/Si systems

AU - Chen, Cheng Shi

AU - Liu, Chuan Pu

AU - Yang, Heng Ghieh

AU - Tsao, Chi Y.A.

PY - 2003/1/1

Y1 - 2003/1/1

N2 - Stoichiometric ZrN films were grown on Si (100) substrates using reactive dc magnetron sputtering and the resistivity and the lattice parameter of these films were studied by post-annealing up to 900°C. Upon annealing, not only increased grain size results but also is the higher mobility by relieving internal stress and by decreasing disorder in the lattice. Therefore, the effect of the annealing on the ZrN films is to decrease their resistivity. Subsequently, the diffusion behavior of the constituent species in the Cu/ZrN/ Si stacks was examined by annealing. The diffusion coefficient and activation energy of Cu in the ZrN barrier were determined with various ZrN thickness. The enhanced barrier properties for the thicker ZrN film was explained in terms of its microstructure.

AB - Stoichiometric ZrN films were grown on Si (100) substrates using reactive dc magnetron sputtering and the resistivity and the lattice parameter of these films were studied by post-annealing up to 900°C. Upon annealing, not only increased grain size results but also is the higher mobility by relieving internal stress and by decreasing disorder in the lattice. Therefore, the effect of the annealing on the ZrN films is to decrease their resistivity. Subsequently, the diffusion behavior of the constituent species in the Cu/ZrN/ Si stacks was examined by annealing. The diffusion coefficient and activation energy of Cu in the ZrN barrier were determined with various ZrN thickness. The enhanced barrier properties for the thicker ZrN film was explained in terms of its microstructure.

UR - http://www.scopus.com/inward/record.url?scp=5744244411&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=5744244411&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:5744244411

SP - 146

EP - 153

ER -

Chen CS, Liu CP, Yang HG, Tsao CYA. Thickness effect on the diffusion barrier properties of ZrN in Cu/ZrN/Si systems. 2003. Paper presented at Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium, Orlando, FL, United States.