Thin-film temperature sensors based on LPD-fabricated β -Ga2O3Schottky diodes

Sanjoy Paul, Tai Siang Chen, Mau Phon Houng, Jian V. Li

Research output: Contribution to journalArticlepeer-review


We report the synthesis of wide-bandgap β-Ga2O3 nanocrystalline thin films via the low-cost and non-vacuum-based liquid phase deposition (LPD) method. The morphological evolution of the nanocrystalline β-Ga2O3 grains was investigated as a function of the growth temperature, processing time, and pH value of the precursor solution. We successfully calcined gallium oxide hydroxide GaO(OH) through a 3-h annealing process at 800 °C to convert it into β-Ga2O3. We fabricated horizontal-structured Ni/β-Ga2O3 Schottky diodes and investigated the electrical characteristics pertinent to sensing temperature in the range of 100-800 K. The temperature sensitivity of the Ni/β-Ga2O3 Schottky-junction temperature sensors, defined as the temperature dependence of junction voltage at a fixed bias current of 10 μA, peaked at -2.924 mV/K in the range between 300 and 500 K. At room temperature, we measured a barrier height of 0.915 eV and a Richardson constant of 43.04 ± 0.01 A/cm2 K2 from the Ni/β-Ga2O3 Schottky junctions. These results indicate that the LPD-synthesized β-Ga2O3 material and devices hold promising potential for sensing applications especially at high temperatures.

Original languageEnglish
Article number055314
JournalAIP Advances
Issue number5
Publication statusPublished - 2022 May 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


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