Thin-Film Transistors with Amorphous Indium-Gallium-Oxide Bilayer Channel

C. P. Yang, S. J. Chang, T. H. Chang, C. Y. Wei, Y. M. Juan, C. J. Chiu, W. Y. Weng

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


The authors report the deposition of amorphous indium-gallium-oxide (a-IGO) films on glass substrate by co-sputtering and the fabrication of thin film transistors (TFTs) with a-IGO bilayer channel. It was found that the electron mobility, μFE, sub-threshold swing, SS, and Ion/Ioff ratio of the fabricated TFTs were all better than those reported previously from the TFTs with single a-IGO channel. By properly controlling the sputtering powers, we achieved TFTs with μFE of 53.2 cm 2/Vs, SS of 0.19 V/decade and Ion/Ioff ratio of 107.

Original languageEnglish
Article number7884959
Pages (from-to)572-575
Number of pages4
JournalIEEE Electron Device Letters
Issue number5
Publication statusPublished - 2017 May

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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