Thin oxide breakdown mechanism of constant voltage stress on MOSFETs

J. H. Chen, C. T. Wei, S. C. Wong, Y. H. Wang

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

The breakdown mechanism of constant-voltage stress in MOSFETs has been investigated. The results show that the transient evolution of stress current dominates the breakdown mechanism of the thin oxide. Due to the stress current decreasing with time induced by trapped charges, the trapped charge increases with stress time, i.e. proportional to Ts0.4. As the results indicate, the relation between trapped charges and time-to-breakdown, the trapped charge generation rate could be obtained. By investigating stress-induced degradations, the impacts of positive constant voltage stress and negative constant voltage stress for device degradation are also analyzed and compared.

Original languageEnglish
Pages (from-to)10-13
Number of pages4
JournalPhysica Scripta T
Volume101
Publication statusPublished - 2002 Jan 1
EventProceedings of the 19th Nordic Semiconductor Meeting - Lyngby, Denmark
Duration: 2001 May 202001 May 23

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Mathematical Physics
  • Condensed Matter Physics

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