Thin oxide breakdown mechanism of constant voltage stress on MOSFETs

J. H. Chen; C. T. Wei; S. C. Wong; Y. H. Wang

Thin oxide breakdown mechanism of constant voltage stress on MOSFETs

J. H. Chen, C. T. Wei, S. C. Wong, Y. H. Wang

Research output: Contribution to journal › Conference article › peer-review

Abstract

The breakdown mechanism of constant-voltage stress in MOSFETs has been investigated. The results show that the transient evolution of stress current dominates the breakdown mechanism of the thin oxide. Due to the stress current decreasing with time induced by trapped charges, the trapped charge increases with stress time, i.e. proportional to T_s^0.4. As the results indicate, the relation between trapped charges and time-to-breakdown, the trapped charge generation rate could be obtained. By investigating stress-induced degradations, the impacts of positive constant voltage stress and negative constant voltage stress for device degradation are also analyzed and compared.

Original language	English
Pages (from-to)	10-13
Number of pages	4
Journal	Physica Scripta T
Volume	101
Publication status	Published - 2002 Jan 1
Event	Proceedings of the 19th Nordic Semiconductor Meeting - Lyngby, Denmark Duration: 2001 May 20 → 2001 May 23

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Mathematical Physics
Condensed Matter Physics

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title = "Thin oxide breakdown mechanism of constant voltage stress on MOSFETs",

abstract = "The breakdown mechanism of constant-voltage stress in MOSFETs has been investigated. The results show that the transient evolution of stress current dominates the breakdown mechanism of the thin oxide. Due to the stress current decreasing with time induced by trapped charges, the trapped charge increases with stress time, i.e. proportional to Ts0.4. As the results indicate, the relation between trapped charges and time-to-breakdown, the trapped charge generation rate could be obtained. By investigating stress-induced degradations, the impacts of positive constant voltage stress and negative constant voltage stress for device degradation are also analyzed and compared.",

author = "Chen, {J. H.} and Wei, {C. T.} and Wong, {S. C.} and Wang, {Y. H.}",

year = "2002",

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note = "Proceedings of the 19th Nordic Semiconductor Meeting ; Conference date: 20-05-2001 Through 23-05-2001",

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TY - JOUR

T1 - Thin oxide breakdown mechanism of constant voltage stress on MOSFETs

AU - Chen, J. H.

AU - Wei, C. T.

AU - Wong, S. C.

AU - Wang, Y. H.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - The breakdown mechanism of constant-voltage stress in MOSFETs has been investigated. The results show that the transient evolution of stress current dominates the breakdown mechanism of the thin oxide. Due to the stress current decreasing with time induced by trapped charges, the trapped charge increases with stress time, i.e. proportional to Ts0.4. As the results indicate, the relation between trapped charges and time-to-breakdown, the trapped charge generation rate could be obtained. By investigating stress-induced degradations, the impacts of positive constant voltage stress and negative constant voltage stress for device degradation are also analyzed and compared.

AB - The breakdown mechanism of constant-voltage stress in MOSFETs has been investigated. The results show that the transient evolution of stress current dominates the breakdown mechanism of the thin oxide. Due to the stress current decreasing with time induced by trapped charges, the trapped charge increases with stress time, i.e. proportional to Ts0.4. As the results indicate, the relation between trapped charges and time-to-breakdown, the trapped charge generation rate could be obtained. By investigating stress-induced degradations, the impacts of positive constant voltage stress and negative constant voltage stress for device degradation are also analyzed and compared.

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M3 - Conference article

AN - SCOPUS:0036437643

VL - 101

SP - 10

EP - 13

JO - Physica Scripta

JF - Physica Scripta

SN - 0031-8949

T2 - Proceedings of the 19th Nordic Semiconductor Meeting

Y2 - 20 May 2001 through 23 May 2001

ER -

Thin oxide breakdown mechanism of constant voltage stress on MOSFETs

Abstract

All Science Journal Classification (ASJC) codes

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