Abstract
The breakdown mechanism of constant-voltage stress in MOSFETs has been investigated. The results show that the transient evolution of stress current dominates the breakdown mechanism of the thin oxide. Due to the stress current decreasing with time induced by trapped charges, the trapped charge increases with stress time, i.e. proportional to Ts0.4. As the results indicate, the relation between trapped charges and time-to-breakdown, the trapped charge generation rate could be obtained. By investigating stress-induced degradations, the impacts of positive constant voltage stress and negative constant voltage stress for device degradation are also analyzed and compared.
Original language | English |
---|---|
Pages (from-to) | 10-13 |
Number of pages | 4 |
Journal | Physica Scripta T |
Volume | 101 |
Publication status | Published - 2002 Jan 1 |
Event | Proceedings of the 19th Nordic Semiconductor Meeting - Lyngby, Denmark Duration: 2001 May 20 → 2001 May 23 |
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Mathematical Physics
- Condensed Matter Physics