Three-dimensional ZnO nanostructure photodetector prepared with through silicon via technology

Yi Hao Chen, Shoou Jinn Chang, Ting Jen Hsueh

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

A ZnO-nanowire photodetector was prepared using threedimensional through silicon via (TSV) technology. The diameter and depth of the Si via were about 80 μm and 170 μm, respectively. Cu uniformly filled in each TSV, whose average resistance was about 0.9 mΩ. For the three-dimensional ZnO-nanowire photodetector, the photocurrent increased rapidly with a time constant of about 1 s when ultraviolet excitation was applied. The on-off current ratio was about 104.

Original languageEnglish
Pages (from-to)2878-2881
Number of pages4
JournalOptics Letters
Volume40
Issue number12
DOIs
Publication statusPublished - 2015 Jan 1

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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