Three-terminal-controlled field-effect resistive hydrogen sensor

Ching Wen Hung, Kun Wei Lin, Hung Chi Chang, Yan Ying Tsai, Po Hsien Lai, Ssu I. Fu, Tzu Pin Chen, Huey Ing Chen, Wen Chau Liu

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11 Citations (Scopus)

Abstract

Based on a Pd/oxide/AlGaAs pseudomorphic high-electron-mobility transistor (PHEMT) structure, an interesting three-terminal-controlled field-effect resistive hydrogen sensor is fabricated and studied. The influences of gate-source bias (VGS) on the hydrogen sensing properties are presented in this work. Experimental results show that the VGS bias significantly affects the resistance sensitivity, conductance variation, current variation, transient response, pressure-dependent and -independent rate constants, and response and recovery time constants. At 30 °C, a significant resistance response (SR = 100 × (Rair - RH2) / Rair) of 33.3% (82.8%) to 4.3 (9970) ppm H2/air is obtained at VGS = -0.6 V. Nevertheless, the largest conductance variation (ΔG) appears to be in the range between VGS = -0.3 and -0.4 V. An empirical equation is derived to explain the consistency between the calculated data and experimental results. Good linear relationship is observed between current variation and temperature under different VGS biases. The transient response at VGS = -0.3 V shows larger current variations, accompanying the longer response and recovery time constants than those at VGS = 0 V. Furthermore, on the basis of a kinetic adsorption analysis, the hydrogen pressure-dependent and -independent rate constants are obtained.

Original languageEnglish
Pages (from-to)549-556
Number of pages8
JournalSensors and Actuators, B: Chemical
Volume124
Issue number2
DOIs
Publication statusPublished - 2007 Jun 26

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Hung, C. W., Lin, K. W., Chang, H. C., Tsai, Y. Y., Lai, P. H., Fu, S. I., Chen, T. P., Chen, H. I., & Liu, W. C. (2007). Three-terminal-controlled field-effect resistive hydrogen sensor. Sensors and Actuators, B: Chemical, 124(2), 549-556. https://doi.org/10.1016/j.snb.2007.01.019