Three-terminal-controlled resistor-type hydrogen sensor

C. W. Hung; H. L. Lin; Y. Y. Tsai; P. H. Lai; S. I. Fu; H. I. Chen; W. C. Liu

doi:10.1049/el:20060529

Three-terminal-controlled resistor-type hydrogen sensor

C. W. Hung, H. L. Lin, Y. Y. Tsai, P. H. Lai, S. I. Fu, H. I. Chen, W. C. Liu

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A novel and interesting three-terminal-controlled active resistor-type hydrogen sensor, based on good properties in the linear region of an AlGaAs-based pseudomorphic high electron mobility transistor in combination with the catalytic Pd metal, is demonstrated. The experimental results show that the gate-source voltage V_GS exhibits significant influence on the hydrogen-sensing properties, including resistance sensitivity, detection limit of hydrogen concentration, conductance variation, current variation and dynamic response. Consequently, under an appropriate applied V_GS bias, a smart active resistor-type hydrogen sensor can be achieved.

Original language	English
Pages (from-to)	578-580
Number of pages	3
Journal	Electronics Letters
Volume	42
Issue number	10
DOIs	https://doi.org/10.1049/el:20060529
Publication status	Published - 2006

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:20060529

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title = "Three-terminal-controlled resistor-type hydrogen sensor",

abstract = "A novel and interesting three-terminal-controlled active resistor-type hydrogen sensor, based on good properties in the linear region of an AlGaAs-based pseudomorphic high electron mobility transistor in combination with the catalytic Pd metal, is demonstrated. The experimental results show that the gate-source voltage VGS exhibits significant influence on the hydrogen-sensing properties, including resistance sensitivity, detection limit of hydrogen concentration, conductance variation, current variation and dynamic response. Consequently, under an appropriate applied VGS bias, a smart active resistor-type hydrogen sensor can be achieved.",

author = "Hung, {C. W.} and Lin, {H. L.} and Tsai, {Y. Y.} and Lai, {P. H.} and Fu, {S. I.} and Chen, {H. I.} and Liu, {W. C.}",

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pages = "578--580",

journal = "Electronics Letters",

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T1 - Three-terminal-controlled resistor-type hydrogen sensor

AU - Hung, C. W.

AU - Lin, H. L.

AU - Tsai, Y. Y.

AU - Lai, P. H.

AU - Fu, S. I.

AU - Chen, H. I.

AU - Liu, W. C.

PY - 2006

Y1 - 2006

N2 - A novel and interesting three-terminal-controlled active resistor-type hydrogen sensor, based on good properties in the linear region of an AlGaAs-based pseudomorphic high electron mobility transistor in combination with the catalytic Pd metal, is demonstrated. The experimental results show that the gate-source voltage VGS exhibits significant influence on the hydrogen-sensing properties, including resistance sensitivity, detection limit of hydrogen concentration, conductance variation, current variation and dynamic response. Consequently, under an appropriate applied VGS bias, a smart active resistor-type hydrogen sensor can be achieved.

AB - A novel and interesting three-terminal-controlled active resistor-type hydrogen sensor, based on good properties in the linear region of an AlGaAs-based pseudomorphic high electron mobility transistor in combination with the catalytic Pd metal, is demonstrated. The experimental results show that the gate-source voltage VGS exhibits significant influence on the hydrogen-sensing properties, including resistance sensitivity, detection limit of hydrogen concentration, conductance variation, current variation and dynamic response. Consequently, under an appropriate applied VGS bias, a smart active resistor-type hydrogen sensor can be achieved.

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SP - 578

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JO - Electronics Letters

JF - Electronics Letters

IS - 10

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Three-terminal-controlled resistor-type hydrogen sensor

Abstract

All Science Journal Classification (ASJC) codes

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