Three-terminal-controlled resistor-type hydrogen sensor

C. W. Hung, H. L. Lin, Y. Y. Tsai, P. H. Lai, S. I. Fu, Huey-Ing Chen, Wen-Chau Liu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A novel and interesting three-terminal-controlled active resistor-type hydrogen sensor, based on good properties in the linear region of an AlGaAs-based pseudomorphic high electron mobility transistor in combination with the catalytic Pd metal, is demonstrated. The experimental results show that the gate-source voltage VGS exhibits significant influence on the hydrogen-sensing properties, including resistance sensitivity, detection limit of hydrogen concentration, conductance variation, current variation and dynamic response. Consequently, under an appropriate applied VGS bias, a smart active resistor-type hydrogen sensor can be achieved.

Original languageEnglish
Pages (from-to)578-580
Number of pages3
JournalElectronics Letters
Volume42
Issue number10
DOIs
Publication statusPublished - 2006 May 24

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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  • Cite this

    Hung, C. W., Lin, H. L., Tsai, Y. Y., Lai, P. H., Fu, S. I., Chen, H-I., & Liu, W-C. (2006). Three-terminal-controlled resistor-type hydrogen sensor. Electronics Letters, 42(10), 578-580. https://doi.org/10.1049/el:20060529