Threshold voltage sensitivity to doping density in extremely scaled MOSFETs

Meng-Hsueh Chiang, Cheng Nang Lin, Guan Shyan Lin

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The dependence of the threshold voltage (VT) on channel doping for extremely scaled devices is investigated. This work is focused on the fundamental VT issue and its physical insight into the impact of the doping density on device characteristics. We find that the threshold voltage is, in fact, insensitive to doping over a wide range of doping density and such insensitivity is further extended by bandgap narrowing in nanoscale MOSFETs via analytical analyses and two-dimensional numerical device simulations (2003 Taurus-MEDICI User Guide (Mountain View, CA: Synopsis Inc.)). This result particularly suggests the scalability and feasibility of nanoscale double-gate MOSFETs.

Original languageEnglish
Pages (from-to)190-193
Number of pages4
JournalSemiconductor Science and Technology
Volume21
Issue number2
DOIs
Publication statusPublished - 2006 Feb 1

Fingerprint

Threshold voltage
threshold voltage
field effect transistors
Doping (additives)
mountains
Scalability
Energy gap
sensitivity
Electric potential
electric potential
simulation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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Threshold voltage sensitivity to doping density in extremely scaled MOSFETs. / Chiang, Meng-Hsueh; Lin, Cheng Nang; Lin, Guan Shyan.

In: Semiconductor Science and Technology, Vol. 21, No. 2, 01.02.2006, p. 190-193.

Research output: Contribution to journalArticle

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