Threshold voltage sensitivity to doping density in extremely scaled MOSFETs

Meng Hsueh Chiang, Cheng Nang Lin, Guan Shyan Lin

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

The dependence of the threshold voltage (VT) on channel doping for extremely scaled devices is investigated. This work is focused on the fundamental VT issue and its physical insight into the impact of the doping density on device characteristics. We find that the threshold voltage is, in fact, insensitive to doping over a wide range of doping density and such insensitivity is further extended by bandgap narrowing in nanoscale MOSFETs via analytical analyses and two-dimensional numerical device simulations (2003 Taurus-MEDICI User Guide (Mountain View, CA: Synopsis Inc.)). This result particularly suggests the scalability and feasibility of nanoscale double-gate MOSFETs.

Original languageEnglish
Pages (from-to)190-193
Number of pages4
JournalSemiconductor Science and Technology
Volume21
Issue number2
DOIs
Publication statusPublished - 2006 Feb 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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