Through-Silicon via Submount for Flip-Chip LEDs

Chun Liang Lu; Shoou Jinn Chang; Wei Shou Chen; Ting Jen Hsueh

doi:10.1149/2.0161712jss

Through-Silicon via Submount for Flip-Chip LEDs

Chun Liang Lu, Shoou Jinn Chang, Wei Shou Chen, Ting Jen Hsueh

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A blue light emitting diode (LED) was prepared by a flip-chip (FC) LED and three-dimensional through-silicon via (3D-TSV) technique. The experimental results indicated that the diameter and length of the Si via were about 180 μm and 400 μm, respectively. The Cu was uniformly and high density filled in each TSV, and the average resistance was about 0.14 m. It was also found that the 96.43Sn-3.57at%Ag bumps were electroplated on the Cu plugged TSVs of a silicon substrate, and these were smoother at 250^◦C. After reflow, a 3D blue light emitting diode was prepared by peak bonding at 250^◦C and 1000 N pressure for 30 min. Compared with the output of the LED 417.17 mw/w, that of the 3D LED was 424.67 mw/w.

Original language	English
Pages (from-to)	R159-R162
Journal	ECS Journal of Solid State Science and Technology
Volume	6
Issue number	12
DOIs	https://doi.org/10.1149/2.0161712jss
Publication status	Published - 2017

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

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10.1149/2.0161712jss

Cite this

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title = "Through-Silicon via Submount for Flip-Chip LEDs",

abstract = "A blue light emitting diode (LED) was prepared by a flip-chip (FC) LED and three-dimensional through-silicon via (3D-TSV) technique. The experimental results indicated that the diameter and length of the Si via were about 180 μm and 400 μm, respectively. The Cu was uniformly and high density filled in each TSV, and the average resistance was about 0.14 m. It was also found that the 96.43Sn-3.57at%Ag bumps were electroplated on the Cu plugged TSVs of a silicon substrate, and these were smoother at 250◦C. After reflow, a 3D blue light emitting diode was prepared by peak bonding at 250◦C and 1000 N pressure for 30 min. Compared with the output of the LED 417.17 mw/w, that of the 3D LED was 424.67 mw/w.",

author = "Lu, {Chun Liang} and Chang, {Shoou Jinn} and Chen, {Wei Shou} and Hsueh, {Ting Jen}",

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doi = "10.1149/2.0161712jss",

language = "English",

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T1 - Through-Silicon via Submount for Flip-Chip LEDs

AU - Lu, Chun Liang

AU - Chang, Shoou Jinn

AU - Chen, Wei Shou

AU - Hsueh, Ting Jen

PY - 2017

Y1 - 2017

N2 - A blue light emitting diode (LED) was prepared by a flip-chip (FC) LED and three-dimensional through-silicon via (3D-TSV) technique. The experimental results indicated that the diameter and length of the Si via were about 180 μm and 400 μm, respectively. The Cu was uniformly and high density filled in each TSV, and the average resistance was about 0.14 m. It was also found that the 96.43Sn-3.57at%Ag bumps were electroplated on the Cu plugged TSVs of a silicon substrate, and these were smoother at 250◦C. After reflow, a 3D blue light emitting diode was prepared by peak bonding at 250◦C and 1000 N pressure for 30 min. Compared with the output of the LED 417.17 mw/w, that of the 3D LED was 424.67 mw/w.

AB - A blue light emitting diode (LED) was prepared by a flip-chip (FC) LED and three-dimensional through-silicon via (3D-TSV) technique. The experimental results indicated that the diameter and length of the Si via were about 180 μm and 400 μm, respectively. The Cu was uniformly and high density filled in each TSV, and the average resistance was about 0.14 m. It was also found that the 96.43Sn-3.57at%Ag bumps were electroplated on the Cu plugged TSVs of a silicon substrate, and these were smoother at 250◦C. After reflow, a 3D blue light emitting diode was prepared by peak bonding at 250◦C and 1000 N pressure for 30 min. Compared with the output of the LED 417.17 mw/w, that of the 3D LED was 424.67 mw/w.

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Through-Silicon via Submount for Flip-Chip LEDs

Abstract

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