Through-silicon: Via submount for the CuO/Cu2O nanostructured field emission display

Chun Liang Lu, Shoou Jinn Chang, Ting Jen Hsueh

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

A three dimensional (3D) field emission display structure was prepared using CuO/Cu2O composite nanowires (NWs) and a three dimensional through silicon via (3D-TSV) technique. The experimental results indicated that the diameter and length of the Si via were about 100 μm and 200 μm, respectively. For the 3D field emission structure, high-density CuO/Cu2O composite nanowires (NWs) were grown on the concave TSV structure using thermal oxidation. The field emission turn-on field and enhancement factor of the CuO/Cu2O composite NWs were 15 V μm-1 and ∼1748, respectively. With regard to field emission displays, we successfully used the 3D field emission structure to excite the orange phosphors.

Original languageEnglish
Pages (from-to)706-709
Number of pages4
JournalRSC Advances
Volume8
Issue number2
DOIs
Publication statusPublished - 2018

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)

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