Through-silicon: Via submount for the CuO/Cu2O nanostructured field emission display

Chun Liang Lu; Shoou Jinn Chang; Ting Jen Hsueh

doi:10.1039/c7ra12368j

Through-silicon: Via submount for the CuO/Cu₂O nanostructured field emission display

Chun Liang Lu
, Shoou Jinn Chang
, Ting Jen Hsueh

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A three dimensional (3D) field emission display structure was prepared using CuO/Cu₂O composite nanowires (NWs) and a three dimensional through silicon via (3D-TSV) technique. The experimental results indicated that the diameter and length of the Si via were about 100 μm and 200 μm, respectively. For the 3D field emission structure, high-density CuO/Cu₂O composite nanowires (NWs) were grown on the concave TSV structure using thermal oxidation. The field emission turn-on field and enhancement factor of the CuO/Cu₂O composite NWs were 15 V μm^-1 and ∼1748, respectively. With regard to field emission displays, we successfully used the 3D field emission structure to excite the orange phosphors.

Original language	English
Pages (from-to)	706-709
Number of pages	4
Journal	RSC Advances
Volume	8
Issue number	2
DOIs	https://doi.org/10.1039/c7ra12368j
Publication status	Published - 2018

All Science Journal Classification (ASJC) codes

General Chemistry
General Chemical Engineering

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10.1039/c7ra12368j

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title = "Through-silicon: Via submount for the CuO/Cu2O nanostructured field emission display",

abstract = "A three dimensional (3D) field emission display structure was prepared using CuO/Cu2O composite nanowires (NWs) and a three dimensional through silicon via (3D-TSV) technique. The experimental results indicated that the diameter and length of the Si via were about 100 μm and 200 μm, respectively. For the 3D field emission structure, high-density CuO/Cu2O composite nanowires (NWs) were grown on the concave TSV structure using thermal oxidation. The field emission turn-on field and enhancement factor of the CuO/Cu2O composite NWs were 15 V μm-1 and ∼1748, respectively. With regard to field emission displays, we successfully used the 3D field emission structure to excite the orange phosphors.",

author = "Lu, \{Chun Liang\} and Chang, \{Shoou Jinn\} and Hsueh, \{Ting Jen\}",

note = "Funding Information: The authors would like to thank the Ministry of Science and Technology, Taiwan (104GE05, 103-2221-E-492-047-MY3), for its support for this project, as well as National Nano Devices Laboratories, Tainan, Taiwan. Publisher Copyright: {\textcopyright} 2018 The Royal Society of Chemistry.",

year = "2018",

doi = "10.1039/c7ra12368j",

language = "English",

volume = "8",

pages = "706--709",

journal = "RSC Advances",

issn = "2046-2069",

publisher = "Royal Society of Chemistry",

number = "2",

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TY - JOUR

T1 - Through-silicon

T2 - Via submount for the CuO/Cu2O nanostructured field emission display

AU - Lu, Chun Liang

AU - Chang, Shoou Jinn

AU - Hsueh, Ting Jen

N1 - Funding Information: The authors would like to thank the Ministry of Science and Technology, Taiwan (104GE05, 103-2221-E-492-047-MY3), for its support for this project, as well as National Nano Devices Laboratories, Tainan, Taiwan. Publisher Copyright: © 2018 The Royal Society of Chemistry.

PY - 2018

Y1 - 2018

N2 - A three dimensional (3D) field emission display structure was prepared using CuO/Cu2O composite nanowires (NWs) and a three dimensional through silicon via (3D-TSV) technique. The experimental results indicated that the diameter and length of the Si via were about 100 μm and 200 μm, respectively. For the 3D field emission structure, high-density CuO/Cu2O composite nanowires (NWs) were grown on the concave TSV structure using thermal oxidation. The field emission turn-on field and enhancement factor of the CuO/Cu2O composite NWs were 15 V μm-1 and ∼1748, respectively. With regard to field emission displays, we successfully used the 3D field emission structure to excite the orange phosphors.

AB - A three dimensional (3D) field emission display structure was prepared using CuO/Cu2O composite nanowires (NWs) and a three dimensional through silicon via (3D-TSV) technique. The experimental results indicated that the diameter and length of the Si via were about 100 μm and 200 μm, respectively. For the 3D field emission structure, high-density CuO/Cu2O composite nanowires (NWs) were grown on the concave TSV structure using thermal oxidation. The field emission turn-on field and enhancement factor of the CuO/Cu2O composite NWs were 15 V μm-1 and ∼1748, respectively. With regard to field emission displays, we successfully used the 3D field emission structure to excite the orange phosphors.

UR - https://www.scopus.com/pages/publications/85040364668

UR - https://www.scopus.com/pages/publications/85040364668#tab=citedBy

U2 - 10.1039/c7ra12368j

DO - 10.1039/c7ra12368j

M3 - Article

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SN - 2046-2069

VL - 8

SP - 706

EP - 709

JO - RSC Advances

JF - RSC Advances

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ER -

Through-silicon: Via submount for the CuO/Cu₂O nanostructured field emission display

Abstract

All Science Journal Classification (ASJC) codes

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