Ti/Al/Ti/Ni/Au ohmic contacts on AlGaN/GaN high electron mobility transistors with improved surface morphology and low contact resistance

Yu Sheng Chiu, Tai Ming Lin, Hong Quan Nguyen, Yu Chen Weng, Chi Lang Nguyen, Yueh Chin Lin, Hung Wei Yu, Edward Yi Chang, Ching Ting Lee

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

Optimizing surface morphology of ohmic contacts on GaN high electron mobility transistors continues to be a challenge in the GaN electronics industry. In this study, a variety of metal schemes were tested under various annealing conditions to obtain contacts with optimal qualities. A Ti/Al/Ti/Ni/Au (20/120/40/60/50 nm) metal scheme demonstrated the lowest contact resistance (Rc) and a smooth surface morphology, and the mechanisms were investigated by materials analysis. A Ti/Al/Ti/Ni/Au metal scheme with optimized Ti and Ni thicknesses can result in formation of a larger proportion of Al-Ni intermetallics and a continuous TiN interlayer, which results in smooth surface and low Rc.

Original languageEnglish
Article number011216
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume32
Issue number1
DOIs
Publication statusPublished - 2014 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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