TiB2 as a diffusion barrier for Cu/〈Si〉 metallization

J. L. Wang, Jen-Sue Chen

Research output: Contribution to journalArticle

Abstract

TiB2 films deposited by co-sputtering from a boron and a TiB2 target are evaluated as the diffusion barrier for Cu metallization. Material characteristics of the TiB2 films and metallurgical interactions of the Cu/TiB2/〈Si〉 system annealed at 400-700°C for 30 min, in a 80%Ar+20%H2 flow, were investigated by glancing angle X-ray diffraction, Auger electron spectroscopy (AES), and scanning electron microscopy (SEM). Sheet resistance was measured for electrical characterization. The composition and resistivity of the sputtered TiB2 films varied with the bias applied on the substrate. To obtain a low film resistivity, a negative bias of 200V was applied during sputtering. The resulting TiB2 film is nanocrystalline with a resistivity of 300 μΩcm. After copper deposition, the Cu/TiB2/〈Si〉 samples have a constant sheet resistance after annealing up to 600°C for 30min. The overall sheet resistance of the sample increases by five orders of magnitude after annealing at 700°C, and scanning electron micrographs reveal that the sample surface is severely deteriorated after annealing at 700°C.

Original languageEnglish
Pages (from-to)33-38
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume563
Publication statusPublished - 1999 Dec 1

Fingerprint

Diffusion barriers
Metallizing
Sheet resistance
Annealing
electrical resistivity
annealing
Sputtering
sputtering
Boron
Auger electron spectroscopy
Auger spectroscopy
electron spectroscopy
Copper
boron
Scanning
X ray diffraction
copper
Scanning electron microscopy
scanning electron microscopy
scanning

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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abstract = "TiB2 films deposited by co-sputtering from a boron and a TiB2 target are evaluated as the diffusion barrier for Cu metallization. Material characteristics of the TiB2 films and metallurgical interactions of the Cu/TiB2/〈Si〉 system annealed at 400-700°C for 30 min, in a 80{\%}Ar+20{\%}H2 flow, were investigated by glancing angle X-ray diffraction, Auger electron spectroscopy (AES), and scanning electron microscopy (SEM). Sheet resistance was measured for electrical characterization. The composition and resistivity of the sputtered TiB2 films varied with the bias applied on the substrate. To obtain a low film resistivity, a negative bias of 200V was applied during sputtering. The resulting TiB2 film is nanocrystalline with a resistivity of 300 μΩcm. After copper deposition, the Cu/TiB2/〈Si〉 samples have a constant sheet resistance after annealing up to 600°C for 30min. The overall sheet resistance of the sample increases by five orders of magnitude after annealing at 700°C, and scanning electron micrographs reveal that the sample surface is severely deteriorated after annealing at 700°C.",
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TiB2 as a diffusion barrier for Cu/〈Si〉 metallization. / Wang, J. L.; Chen, Jen-Sue.

In: Materials Research Society Symposium - Proceedings, Vol. 563, 01.12.1999, p. 33-38.

Research output: Contribution to journalArticle

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