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TiB
2
as a diffusion barrier for Cu/〈Si〉 metallization
J. L. Wang,
J. S. Chen
Department of Materials Science and Engineering
International Curriculum for Advanced Materials Program
Research output
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Contribution to journal
›
Article
›
peer-review
1
Citation (Scopus)
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2
as a diffusion barrier for Cu/〈Si〉 metallization'. Together they form a unique fingerprint.
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Engineering & Materials Science
Diffusion barriers
100%
Metallizing
78%
Sheet resistance
56%
Annealing
40%
Sputtering
34%
Auger electron spectroscopy
21%
Boron
15%
Electrons
13%
X ray diffraction
13%
Copper
11%
Scanning electron microscopy
10%
Scanning
10%
Substrates
9%
Chemical analysis
8%
Chemical Compounds
Diffusion Barrier
85%
Sheet Resistance
49%
Liquid Film
32%
Annealing
32%
Auger Electron Spectroscopy
15%
Sputtering
14%
Boron Atom
11%
Flow
8%
Scanning Electron Microscopy
8%
Electron Particle
7%
X-Ray Diffraction
6%
Physics & Astronomy
electrical resistivity
25%
annealing
24%
sputtering
21%
Auger spectroscopy
13%
electron spectroscopy
13%
boron
11%
copper
9%
scanning electron microscopy
8%
scanning
8%
characterization
7%
diffraction
7%
x rays
6%
electrons
5%
interactions
5%