Tight-Binding Band Structures of Nanographite Multiribbons

F. L. Shyu, Ming Fa Lin, C. P. Chang, R. B. Chen, J. S. Shyu, Y. C. Wang, C. H. Liao

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17 Citations (Scopus)

Abstract

Electronic properties of AB-stacked nanographite ribbons depend on the edge structure, the ribbon width (Ny), and the ribbon number (Nz). All zigzag ribbons are metals, while armchair ribbons are metals only for Ny = 3I + 2 (I an integer). The dependence of energy gap on the ribbon number is weak for the semiconducting armchair multiribbons with Nz > 5. The semiconductor-metal transition is absent in the increasing of Nz. Density of states exhibits many special structures. The interlayer interactions would affect the energy dispersions of band structures. They could induce the hybridization of energy bands, the new partial flat bands along the kx- or kz-direction, the asymmetry of the electronic structure about the Fermi level, the change from the direct energy gap into the indirect energy gap, the destruction of the state degeneracy, and the alternation of the special structures in the density of states.

Original languageEnglish
Pages (from-to)3348-3355
Number of pages8
JournalJournal of the Physical Society of Japan
Volume70
Issue number11
DOIs
Publication statusPublished - 2001 Nov 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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  • Cite this

    Shyu, F. L., Lin, M. F., Chang, C. P., Chen, R. B., Shyu, J. S., Wang, Y. C., & Liao, C. H. (2001). Tight-Binding Band Structures of Nanographite Multiribbons. Journal of the Physical Society of Japan, 70(11), 3348-3355. https://doi.org/10.1143/JPSJ.70.3348