Time-resolved Response Improvement of Oxygen-doped a-In-Ga-Sn-O Metal-Semiconductor-Metal Photodetectors by Sputtering

Artde Donald Kin Tak Lam; Tsung I. Liao; Sheng Po Chang; Shoou Jinn Chang

doi:10.18494/SAM4803

Time-resolved Response Improvement of Oxygen-doped a-In-Ga-Sn-O Metal-Semiconductor-Metal Photodetectors by Sputtering

Artde Donald Kin Tak Lam, Tsung I. Liao, Sheng Po Chang, Shoou Jinn Chang

Research output: Contribution to journal › Article › peer-review

Abstract

In this work, we fabricated indium gallium zinc oxide (IGTO) metal-semiconductor-metal (MSM) photodetectors (PDs) with different oxygen flow ratios and investigated and discussed their characteristics. 0% PDs show a high responsivity of 25.75 A/W, but their dark current is very high and their switching time is low. 10% PDs exhibit the highest performance. They show a high photo/dark current ratio of 1.05 × 10⁵ with a low dark current of 1.19 × 10⁻¹¹ A. Their responsivity is 0.12 A/W and their rejection ratio is 9.38 × 10⁵, which is sufficiently high to ensure the accuracy of distinguishing between UV and visible ranges. Their rising time is 206 s and their falling time is 58 s. It was observed that the response time shortened as the oxygen flow ratio was increased.

Original language	English
Pages (from-to)	1849-1858
Number of pages	10
Journal	Sensors and Materials
Volume	36
Issue number	5
DOIs	https://doi.org/10.18494/SAM4803
Publication status	Published - 2024

All Science Journal Classification (ASJC) codes

Instrumentation
General Materials Science

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10.18494/SAM4803

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title = "Time-resolved Response Improvement of Oxygen-doped a-In-Ga-Sn-O Metal-Semiconductor-Metal Photodetectors by Sputtering",

abstract = "In this work, we fabricated indium gallium zinc oxide (IGTO) metal-semiconductor-metal (MSM) photodetectors (PDs) with different oxygen flow ratios and investigated and discussed their characteristics. 0% PDs show a high responsivity of 25.75 A/W, but their dark current is very high and their switching time is low. 10% PDs exhibit the highest performance. They show a high photo/dark current ratio of 1.05 × 105 with a low dark current of 1.19 × 10−11 A. Their responsivity is 0.12 A/W and their rejection ratio is 9.38 × 105, which is sufficiently high to ensure the accuracy of distinguishing between UV and visible ranges. Their rising time is 206 s and their falling time is 58 s. It was observed that the response time shortened as the oxygen flow ratio was increased.",

author = "Lam, {Artde Donald Kin Tak} and Liao, {Tsung I.} and Chang, {Sheng Po} and Chang, {Shoou Jinn}",

year = "2024",

doi = "10.18494/SAM4803",

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TY - JOUR

T1 - Time-resolved Response Improvement of Oxygen-doped a-In-Ga-Sn-O Metal-Semiconductor-Metal Photodetectors by Sputtering

AU - Lam, Artde Donald Kin Tak

AU - Liao, Tsung I.

AU - Chang, Sheng Po

AU - Chang, Shoou Jinn

PY - 2024

Y1 - 2024

N2 - In this work, we fabricated indium gallium zinc oxide (IGTO) metal-semiconductor-metal (MSM) photodetectors (PDs) with different oxygen flow ratios and investigated and discussed their characteristics. 0% PDs show a high responsivity of 25.75 A/W, but their dark current is very high and their switching time is low. 10% PDs exhibit the highest performance. They show a high photo/dark current ratio of 1.05 × 105 with a low dark current of 1.19 × 10−11 A. Their responsivity is 0.12 A/W and their rejection ratio is 9.38 × 105, which is sufficiently high to ensure the accuracy of distinguishing between UV and visible ranges. Their rising time is 206 s and their falling time is 58 s. It was observed that the response time shortened as the oxygen flow ratio was increased.

AB - In this work, we fabricated indium gallium zinc oxide (IGTO) metal-semiconductor-metal (MSM) photodetectors (PDs) with different oxygen flow ratios and investigated and discussed their characteristics. 0% PDs show a high responsivity of 25.75 A/W, but their dark current is very high and their switching time is low. 10% PDs exhibit the highest performance. They show a high photo/dark current ratio of 1.05 × 105 with a low dark current of 1.19 × 10−11 A. Their responsivity is 0.12 A/W and their rejection ratio is 9.38 × 105, which is sufficiently high to ensure the accuracy of distinguishing between UV and visible ranges. Their rising time is 206 s and their falling time is 58 s. It was observed that the response time shortened as the oxygen flow ratio was increased.

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Time-resolved Response Improvement of Oxygen-doped a-In-Ga-Sn-O Metal-Semiconductor-Metal Photodetectors by Sputtering

Abstract

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