TiO2-dielectric AlGaN/GaN/Si metal-oxide-semiconductor high electron mobility transistors by using nonvacuum ultrasonic spray pyrolysis deposition

Bo Yi Chou, Ching Sung Lee, Cheng Long Yang, Wei Chou Hsu, Han Yin Liu, Meng Hsueh Chiang, Wen Ching Sun, Sung Yen Wei, Sheng Min Yu

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