Ti_0.5Al_0.5O-dielectric AlGaN/GaN/Si metal-oxide-semiconductor heterostructure field-effect transistors by using non-vacuum ultrasonic spray pyrolysis deposition

Engineering & Materials Science

• Spray pyrolysis 100%
• Oxide semiconductors 76%
• High electron mobility transistors 74%
• Electric breakdown 72%
• Current density 62%
• Ultrasonics 54%
• Metals 41%
• Passivation 38%
• Permittivity 32%
• Insulation 27%
• Capacitance 27%
• Substrates 22%
• Electric potential 16%
• Temperature 12%

Chemical Compounds

• Breakdown Voltage 95%
• Spray Pyrolysis 74%
• Field Effect 63%
• Current Density 47%
• Deposition Technique 34%
• Chemical Passivation 32%
• Dielectric Constant 29%