Titanium nitride as spreading layers for AlGaInP visible LEDs

Chien Chih Liu, Wei Ting Wang, Mau Phon Houng, Yeong Her Wang, Shi Ming Chen

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


Thin titanium nitride (TiN) films with low sheet resistance and high transparency were deposited on AlGaInP light-emitting diodes (LEDs) to improve light extraction from the LED surface. Comparison test devices were fabricated both with and without TiN spreading layers. Results show LED current crowding at high current is reduced for devices with TiN current spreading film, improving external efficiency. It is confirmed that TiN films are feasible as current spreading layers of AlGaInP LEDs.

Original languageEnglish
Pages (from-to)1665-1667
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number12
Publication statusPublished - 2002 Dec

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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