Titanium nitride as spreading layers for AlGaInP visible LEDs

Chien Chih Liu; Wei Ting Wang; Mau Phon Houng; Yeong Her Wang; Shi Ming Chen

doi:10.1109/LPT.2002.804669

Titanium nitride as spreading layers for AlGaInP visible LEDs

Chien Chih Liu, Wei Ting Wang, Mau Phon Houng, Yeong Her Wang, Shi Ming Chen

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Thin titanium nitride (TiN) films with low sheet resistance and high transparency were deposited on AlGaInP light-emitting diodes (LEDs) to improve light extraction from the LED surface. Comparison test devices were fabricated both with and without TiN spreading layers. Results show LED current crowding at high current is reduced for devices with TiN current spreading film, improving external efficiency. It is confirmed that TiN films are feasible as current spreading layers of AlGaInP LEDs.

Original language	English
Pages (from-to)	1665-1667
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	14
Issue number	12
DOIs	https://doi.org/10.1109/LPT.2002.804669
Publication status	Published - 2002 Dec

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2002.804669

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title = "Titanium nitride as spreading layers for AlGaInP visible LEDs",

abstract = "Thin titanium nitride (TiN) films with low sheet resistance and high transparency were deposited on AlGaInP light-emitting diodes (LEDs) to improve light extraction from the LED surface. Comparison test devices were fabricated both with and without TiN spreading layers. Results show LED current crowding at high current is reduced for devices with TiN current spreading film, improving external efficiency. It is confirmed that TiN films are feasible as current spreading layers of AlGaInP LEDs.",

author = "Liu, {Chien Chih} and Wang, {Wei Ting} and Houng, {Mau Phon} and Wang, {Yeong Her} and Chen, {Shi Ming}",

note = "Funding Information: Manuscript received June 17, 2002; revised August 6, 2002. This work was supported by the National Science Council under Contract NSC 90-2215-E-006-018.",

year = "2002",

month = dec,

doi = "10.1109/LPT.2002.804669",

language = "English",

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journal = "IEEE Photonics Technology Letters",

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T1 - Titanium nitride as spreading layers for AlGaInP visible LEDs

AU - Liu, Chien Chih

AU - Wang, Wei Ting

AU - Houng, Mau Phon

AU - Wang, Yeong Her

AU - Chen, Shi Ming

N1 - Funding Information: Manuscript received June 17, 2002; revised August 6, 2002. This work was supported by the National Science Council under Contract NSC 90-2215-E-006-018.

PY - 2002/12

Y1 - 2002/12

N2 - Thin titanium nitride (TiN) films with low sheet resistance and high transparency were deposited on AlGaInP light-emitting diodes (LEDs) to improve light extraction from the LED surface. Comparison test devices were fabricated both with and without TiN spreading layers. Results show LED current crowding at high current is reduced for devices with TiN current spreading film, improving external efficiency. It is confirmed that TiN films are feasible as current spreading layers of AlGaInP LEDs.

AB - Thin titanium nitride (TiN) films with low sheet resistance and high transparency were deposited on AlGaInP light-emitting diodes (LEDs) to improve light extraction from the LED surface. Comparison test devices were fabricated both with and without TiN spreading layers. Results show LED current crowding at high current is reduced for devices with TiN current spreading film, improving external efficiency. It is confirmed that TiN films are feasible as current spreading layers of AlGaInP LEDs.

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JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

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ER -

Titanium nitride as spreading layers for AlGaInP visible LEDs

Abstract

All Science Journal Classification (ASJC) codes

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