Titanium nitride diffusion barrier for copper metallization on gallium arsenide

H. C. Chen, B. H. Tseng, M. P. Houng, Y. H. Wang

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20 Citations (Scopus)


The diffusion properties of Cu, Cu/titanium nitride (TiN) and Cu/TiN/Ti metallization on GaAs, including as-deposited film and others annealed at 350-550 °C, were investigated and compared. Data obtained from X-ray diffractometry, resistivity measurements, scanning electron microscopy, energy dispersive spectrometer and Auger electron spectroscopy indicated that in the as-deposited Cu/GaAs structure, copper diffused into GaAs substrate, and a diffusion barrier was required to block the fast diffusion. For the Cu/TiN/GaAs structure, the columnar grain structure of TiN films provided paths for diffusion at higher temperatures above 450 °C. The Cu/TiN/Ti films on GaAs substrate were very stable up to 550 °C without any interfacial interaction. These results show that a TiN/Ti composite film forms a good diffusion barrier for copper metallization with GaAs.

Original languageEnglish
Pages (from-to)112-117
Number of pages6
JournalThin Solid Films
Issue number1
Publication statusPublished - 2003 Nov 24

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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