Topological Transitions Induced by Antiferromagnetism in a Thin-Film Topological Insulator

Qing Lin He, Gen Yin, Luyan Yu, Alexander J. Grutter, Lei Pan, Chui Zhen Chen, Xiaoyu Che, Guoqiang Yu, Bin Zhang, Qiming Shao, Alexander L. Stern, Brian Casas, Jing Xia, Xiaodong Han, Brian J. Kirby, Roger K. Lake, K. T. Law, Kang L. Wang

Research output: Contribution to journalArticlepeer-review

32 Citations (Scopus)


Magnetism in topological insulators (TIs) opens a topologically nontrivial exchange band gap, providing an exciting platform for manipulating the topological order through an external magnetic field. Here, we show that the surface of an antiferromagnetic thin film can magnetize the top and the bottom TI surface states through interfacial couplings. During the magnetization reversal, intermediate spin configurations are ascribed from unsynchronized magnetic switchings. This unsynchronized switching develops antisymmetric magnetoresistance spikes during magnetization reversals, which might originate from a series of topological transitions. With the high Néel ordering temperature provided by the antiferromagnetic layers, the signature of the induced topological transition persists up to ∼90 K.

Original languageEnglish
Article number096802
JournalPhysical review letters
Issue number9
Publication statusPublished - 2018 Aug 29

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


Dive into the research topics of 'Topological Transitions Induced by Antiferromagnetism in a Thin-Film Topological Insulator'. Together they form a unique fingerprint.

Cite this