TY - JOUR
T1 - Total toxicity equivalents emissions of SF6, CHF3, and CCl2F2 decomposed in a RF plasma environment
AU - Wang, Ya Fen
AU - Shih, Minliang
AU - Tsai, Cheng Hsien
AU - Tsai, Perng Jy
N1 - Funding Information:
The authors would like to thank the National Science Council, Taiwan for financially supporting this work under Contract No. NSC 92-2211-E-041-011.
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2006/3
Y1 - 2006/3
N2 - Sulfur hexafluorine compound (SF6), trifluoromethane (CHF 3) and diclorodifluoromethane (CCl2F2) are extensively used in the semiconductor industry. They are global warming gases. Most studies have addressed the effective decomposition of fluorine compounds, rather than the toxicity of decomposed by-products. Hence, the concepts of toxicity equivalents (TEQs) were applied in this work. The results indicated that HF and SiF4 were the two greatest contributors of TEQ to the SF6/H2/Ar plasma system, while F2 and SiF 4 were the two greatest contributors to the SF6/O 2/Ar system. Additionally, SiF4 and HF were the two greatest contributors of TEQ to both the CHF3/H2/Ar and CHF3/O2/Ar plasma systems. HF and HCl were the two greatest contributors of TEQ to the CCl2F2/H 2/Ar plasma system, and Cl2 and COCl2 were the two greatest contributors to the CCl2F2/O2/Ar system. HCl and HF can be recovered using wet scrubbing, which reduces the toxicity of these emission gases. Consequently, the hydrogen-based plasma system was a better alternative for treating gases that contained SF6, CHF3 and CCl2F2 from the TEQs point of view.
AB - Sulfur hexafluorine compound (SF6), trifluoromethane (CHF 3) and diclorodifluoromethane (CCl2F2) are extensively used in the semiconductor industry. They are global warming gases. Most studies have addressed the effective decomposition of fluorine compounds, rather than the toxicity of decomposed by-products. Hence, the concepts of toxicity equivalents (TEQs) were applied in this work. The results indicated that HF and SiF4 were the two greatest contributors of TEQ to the SF6/H2/Ar plasma system, while F2 and SiF 4 were the two greatest contributors to the SF6/O 2/Ar system. Additionally, SiF4 and HF were the two greatest contributors of TEQ to both the CHF3/H2/Ar and CHF3/O2/Ar plasma systems. HF and HCl were the two greatest contributors of TEQ to the CCl2F2/H 2/Ar plasma system, and Cl2 and COCl2 were the two greatest contributors to the CCl2F2/O2/Ar system. HCl and HF can be recovered using wet scrubbing, which reduces the toxicity of these emission gases. Consequently, the hydrogen-based plasma system was a better alternative for treating gases that contained SF6, CHF3 and CCl2F2 from the TEQs point of view.
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U2 - 10.1016/j.chemosphere.2005.06.036
DO - 10.1016/j.chemosphere.2005.06.036
M3 - Article
C2 - 16084562
AN - SCOPUS:33644552486
SN - 0045-6535
VL - 62
SP - 1681
EP - 1688
JO - Chemosphere
JF - Chemosphere
IS - 10
ER -