Toward Perfect Surfaces of Transition Metal Dichalcogenides with Ion Bombardment and Annealing Treatment

Wan Hsin Chen; Naoya Kawakami; Jing Wen Hsueh; Lai Hsiang Kuo; Jiun Yu Chen; Ting Wei Liao; Chia Nung Kuo; Chin Shan Lue; Yu Ling Lai; Yao Jane Hsu; Der Hsien Lien; Chenming Hu; Jyh Pin Chou; Meng Fan Luo; Chun Liang Lin

doi:10.1021/acsami.2c21150

Toward Perfect Surfaces of Transition Metal Dichalcogenides with Ion Bombardment and Annealing Treatment

Wan Hsin Chen, Naoya Kawakami, Jing Wen Hsueh, Lai Hsiang Kuo, Jiun Yu Chen, Ting Wei Liao, Chia Nung Kuo, Chin Shan Lue, Yu Ling Lai, Yao Jane Hsu, Der Hsien Lien, Chenming Hu, Jyh Pin Chou, Meng Fan Luo, Chun Liang Lin

Department of Physics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Layered transition metal dichalcogenides (TMDs) are two-dimensional materials exhibiting a variety of unique features with great potential for electronic and optoelectronic applications. The performance of devices fabricated with mono or few-layer TMD materials, nevertheless, is significantly affected by surface defects in the TMD materials. Recent efforts have been focused on delicate control of growth conditions to reduce the defect density, whereas the preparation of a defect-free surface remains challenging. Here, we show a counterintuitive approach to decrease surface defects on layered TMDs: a two-step process including Ar ion bombardment and subsequent annealing. With this approach, the defects, mainly Te vacancies, on the as-cleaved PtTe₂ and PdTe₂ surfaces were decreased by more than 99%, giving a defect density <1.0 × 10¹⁰ cm^-2, which cannot be achieved solely with annealing. We also attempt to propose a mechanism behind the processes.

Original language	English
Pages (from-to)	16153-16161
Number of pages	9
Journal	ACS Applied Materials and Interfaces
Volume	15
Issue number	12
DOIs	https://doi.org/10.1021/acsami.2c21150
Publication status	Published - 2023 Mar 29

All Science Journal Classification (ASJC) codes

General Materials Science

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10.1021/acsami.2c21150

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Chen, W. H., Kawakami, N., Hsueh, J. W., Kuo, L. H., Chen, J. Y., Liao, T. W., Kuo, C. N., Lue, C. S., Lai, Y. L., Hsu, Y. J., Lien, D. H., Hu, C., Chou, J. P., Luo, M. F., & Lin, C. L. (2023). Toward Perfect Surfaces of Transition Metal Dichalcogenides with Ion Bombardment and Annealing Treatment. ACS Applied Materials and Interfaces, 15(12), 16153-16161. https://doi.org/10.1021/acsami.2c21150

@article{c2c5afd2044e4ae8a32cdfdab33e5ca6,

title = "Toward Perfect Surfaces of Transition Metal Dichalcogenides with Ion Bombardment and Annealing Treatment",

abstract = "Layered transition metal dichalcogenides (TMDs) are two-dimensional materials exhibiting a variety of unique features with great potential for electronic and optoelectronic applications. The performance of devices fabricated with mono or few-layer TMD materials, nevertheless, is significantly affected by surface defects in the TMD materials. Recent efforts have been focused on delicate control of growth conditions to reduce the defect density, whereas the preparation of a defect-free surface remains challenging. Here, we show a counterintuitive approach to decrease surface defects on layered TMDs: a two-step process including Ar ion bombardment and subsequent annealing. With this approach, the defects, mainly Te vacancies, on the as-cleaved PtTe2 and PdTe2 surfaces were decreased by more than 99%, giving a defect density <1.0 × 1010 cm-2, which cannot be achieved solely with annealing. We also attempt to propose a mechanism behind the processes.",

author = "Chen, {Wan Hsin} and Naoya Kawakami and Hsueh, {Jing Wen} and Kuo, {Lai Hsiang} and Chen, {Jiun Yu} and Liao, {Ting Wei} and Kuo, {Chia Nung} and Lue, {Chin Shan} and Lai, {Yu Ling} and Hsu, {Yao Jane} and Lien, {Der Hsien} and Chenming Hu and Chou, {Jyh Pin} and Luo, {Meng Fan} and Lin, {Chun Liang}",

note = "Funding Information: This work was financially supported by the “Center for the Semiconductor Technology Research” from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan. This study was also supported in part by the National Science and Technology Council, Taiwan, under grants NSTC 110-2634-F-009-027, NSTC 110-2112-M-A49-013-MY3, NSTC 110-2112-M-A49-022-MY2, NSTC 109-2112-M-018-008-MY3, and MOST 109-2112-M-008-030-MY2. Publisher Copyright: {\textcopyright} 2023 American Chemical Society.",

year = "2023",

month = mar,

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doi = "10.1021/acsami.2c21150",

language = "English",

volume = "15",

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journal = "ACS Applied Materials and Interfaces",

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T1 - Toward Perfect Surfaces of Transition Metal Dichalcogenides with Ion Bombardment and Annealing Treatment

AU - Chen, Wan Hsin

AU - Kawakami, Naoya

AU - Hsueh, Jing Wen

AU - Kuo, Lai Hsiang

AU - Chen, Jiun Yu

AU - Liao, Ting Wei

AU - Kuo, Chia Nung

AU - Lue, Chin Shan

AU - Lai, Yu Ling

AU - Hsu, Yao Jane

AU - Lien, Der Hsien

AU - Hu, Chenming

AU - Chou, Jyh Pin

AU - Luo, Meng Fan

AU - Lin, Chun Liang

N1 - Funding Information: This work was financially supported by the “Center for the Semiconductor Technology Research” from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan. This study was also supported in part by the National Science and Technology Council, Taiwan, under grants NSTC 110-2634-F-009-027, NSTC 110-2112-M-A49-013-MY3, NSTC 110-2112-M-A49-022-MY2, NSTC 109-2112-M-018-008-MY3, and MOST 109-2112-M-008-030-MY2. Publisher Copyright: © 2023 American Chemical Society.

PY - 2023/3/29

Y1 - 2023/3/29

N2 - Layered transition metal dichalcogenides (TMDs) are two-dimensional materials exhibiting a variety of unique features with great potential for electronic and optoelectronic applications. The performance of devices fabricated with mono or few-layer TMD materials, nevertheless, is significantly affected by surface defects in the TMD materials. Recent efforts have been focused on delicate control of growth conditions to reduce the defect density, whereas the preparation of a defect-free surface remains challenging. Here, we show a counterintuitive approach to decrease surface defects on layered TMDs: a two-step process including Ar ion bombardment and subsequent annealing. With this approach, the defects, mainly Te vacancies, on the as-cleaved PtTe2 and PdTe2 surfaces were decreased by more than 99%, giving a defect density <1.0 × 1010 cm-2, which cannot be achieved solely with annealing. We also attempt to propose a mechanism behind the processes.

AB - Layered transition metal dichalcogenides (TMDs) are two-dimensional materials exhibiting a variety of unique features with great potential for electronic and optoelectronic applications. The performance of devices fabricated with mono or few-layer TMD materials, nevertheless, is significantly affected by surface defects in the TMD materials. Recent efforts have been focused on delicate control of growth conditions to reduce the defect density, whereas the preparation of a defect-free surface remains challenging. Here, we show a counterintuitive approach to decrease surface defects on layered TMDs: a two-step process including Ar ion bombardment and subsequent annealing. With this approach, the defects, mainly Te vacancies, on the as-cleaved PtTe2 and PdTe2 surfaces were decreased by more than 99%, giving a defect density <1.0 × 1010 cm-2, which cannot be achieved solely with annealing. We also attempt to propose a mechanism behind the processes.

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DO - 10.1021/acsami.2c21150

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JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

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ER -

Toward Perfect Surfaces of Transition Metal Dichalcogenides with Ion Bombardment and Annealing Treatment

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