Towards Si1-xGex quantum-well resonant-state terahertz laser

I. V. Altukhov, E. G. Chirkova, V. P. Sinis, M. S. Kagan, Yu P. Gousev, S. G. Thomas, K. L. Wang, M. A. Odnoblyudov, I. N. Yassievich

Research output: Contribution to journalArticlepeer-review

61 Citations (Scopus)

Abstract

We report on the experimental evidence for terahertz (THz) lasing of boron-doped strained Si1-xGex quantum-well structures. The lasing arises under strong electric fields (300-1500 V/cm) applied parallel to interfaces. The spectrum of THz stimulated emission is presented showing the lasing wavelength near 100 μm and the modal structure caused by a resonator. The mechanism of population inversion is based on the formation of resonant acceptor states in strained SiGe layer.

Original languageEnglish
Pages (from-to)3909-3911
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number24
DOIs
Publication statusPublished - 2001 Dec 10

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Towards Si<sub>1-x</sub>Ge<sub>x</sub> quantum-well resonant-state terahertz laser'. Together they form a unique fingerprint.

Cite this