Towards the high performance N channel organic memory transistors with modified polyimide gate dielectrics

Yu Fu Wang, Chin Yang Lin, Min Ruei Tsai, Horng-Long Cheng, Wei-Yang Chou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Organic field-effect transistor-based (OFET) memory devices with polyimide (PI) electrets were fabricated. Herein, we have demonstrated the relevance between electrical characteristics and polarity effects of polymeric gate electret with quasi-permanent electric charges. The memory behaviors and drain currents of OFETs could be remarkably enhanced by using polymeric PI electrets which can trap the charge carriers into its polar groups by bias-induced dipole fields. Moreover, these trapped charges can be rapidly released through reorientation of dipoles within bias field. Consequently, the electric dipoles within the PI electret play a key role in extending the memory window and enhancing electrical characteristics of OFET-based memory devices to achieve high-performance organic memory transistors.

Original languageEnglish
Title of host publicationProceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publicationTFT Technologies and FPD Materials
PublisherIEEE Computer Society
Pages169-172
Number of pages4
ISBN (Print)9784863483958
DOIs
Publication statusPublished - 2014 Jan 1
Event21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014 - Kyoto, Japan
Duration: 2014 Jul 22014 Jul 4

Publication series

NameProceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

Other

Other21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014
CountryJapan
CityKyoto
Period14-07-0214-07-04

Fingerprint

Gate dielectrics
Electrets
Polyimides
Transistors
Organic field effect transistors
Data storage equipment
Electric charge
Drain current
Charge carriers

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Wang, Y. F., Lin, C. Y., Tsai, M. R., Cheng, H-L., & Chou, W-Y. (2014). Towards the high performance N channel organic memory transistors with modified polyimide gate dielectrics. In Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials (pp. 169-172). [6867161] (Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials). IEEE Computer Society. https://doi.org/10.1109/AM-FPD.2014.6867161
Wang, Yu Fu ; Lin, Chin Yang ; Tsai, Min Ruei ; Cheng, Horng-Long ; Chou, Wei-Yang. / Towards the high performance N channel organic memory transistors with modified polyimide gate dielectrics. Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. IEEE Computer Society, 2014. pp. 169-172 (Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).
@inproceedings{4a86906493cc470a9f56acb662dba8c6,
title = "Towards the high performance N channel organic memory transistors with modified polyimide gate dielectrics",
abstract = "Organic field-effect transistor-based (OFET) memory devices with polyimide (PI) electrets were fabricated. Herein, we have demonstrated the relevance between electrical characteristics and polarity effects of polymeric gate electret with quasi-permanent electric charges. The memory behaviors and drain currents of OFETs could be remarkably enhanced by using polymeric PI electrets which can trap the charge carriers into its polar groups by bias-induced dipole fields. Moreover, these trapped charges can be rapidly released through reorientation of dipoles within bias field. Consequently, the electric dipoles within the PI electret play a key role in extending the memory window and enhancing electrical characteristics of OFET-based memory devices to achieve high-performance organic memory transistors.",
author = "Wang, {Yu Fu} and Lin, {Chin Yang} and Tsai, {Min Ruei} and Horng-Long Cheng and Wei-Yang Chou",
year = "2014",
month = "1",
day = "1",
doi = "10.1109/AM-FPD.2014.6867161",
language = "English",
isbn = "9784863483958",
series = "Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials",
publisher = "IEEE Computer Society",
pages = "169--172",
booktitle = "Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices",
address = "United States",

}

Wang, YF, Lin, CY, Tsai, MR, Cheng, H-L & Chou, W-Y 2014, Towards the high performance N channel organic memory transistors with modified polyimide gate dielectrics. in Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials., 6867161, Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, IEEE Computer Society, pp. 169-172, 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014, Kyoto, Japan, 14-07-02. https://doi.org/10.1109/AM-FPD.2014.6867161

Towards the high performance N channel organic memory transistors with modified polyimide gate dielectrics. / Wang, Yu Fu; Lin, Chin Yang; Tsai, Min Ruei; Cheng, Horng-Long; Chou, Wei-Yang.

Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. IEEE Computer Society, 2014. p. 169-172 6867161 (Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Towards the high performance N channel organic memory transistors with modified polyimide gate dielectrics

AU - Wang, Yu Fu

AU - Lin, Chin Yang

AU - Tsai, Min Ruei

AU - Cheng, Horng-Long

AU - Chou, Wei-Yang

PY - 2014/1/1

Y1 - 2014/1/1

N2 - Organic field-effect transistor-based (OFET) memory devices with polyimide (PI) electrets were fabricated. Herein, we have demonstrated the relevance between electrical characteristics and polarity effects of polymeric gate electret with quasi-permanent electric charges. The memory behaviors and drain currents of OFETs could be remarkably enhanced by using polymeric PI electrets which can trap the charge carriers into its polar groups by bias-induced dipole fields. Moreover, these trapped charges can be rapidly released through reorientation of dipoles within bias field. Consequently, the electric dipoles within the PI electret play a key role in extending the memory window and enhancing electrical characteristics of OFET-based memory devices to achieve high-performance organic memory transistors.

AB - Organic field-effect transistor-based (OFET) memory devices with polyimide (PI) electrets were fabricated. Herein, we have demonstrated the relevance between electrical characteristics and polarity effects of polymeric gate electret with quasi-permanent electric charges. The memory behaviors and drain currents of OFETs could be remarkably enhanced by using polymeric PI electrets which can trap the charge carriers into its polar groups by bias-induced dipole fields. Moreover, these trapped charges can be rapidly released through reorientation of dipoles within bias field. Consequently, the electric dipoles within the PI electret play a key role in extending the memory window and enhancing electrical characteristics of OFET-based memory devices to achieve high-performance organic memory transistors.

UR - http://www.scopus.com/inward/record.url?scp=84906236295&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84906236295&partnerID=8YFLogxK

U2 - 10.1109/AM-FPD.2014.6867161

DO - 10.1109/AM-FPD.2014.6867161

M3 - Conference contribution

SN - 9784863483958

T3 - Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

SP - 169

EP - 172

BT - Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices

PB - IEEE Computer Society

ER -

Wang YF, Lin CY, Tsai MR, Cheng H-L, Chou W-Y. Towards the high performance N channel organic memory transistors with modified polyimide gate dielectrics. In Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. IEEE Computer Society. 2014. p. 169-172. 6867161. (Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials). https://doi.org/10.1109/AM-FPD.2014.6867161