Towards the high performance N channel organic memory transistors with modified polyimide gate dielectrics

Yu Fu Wang, Chin Yang Lin, Min Ruei Tsai, Horng-Long Cheng, Wei-Yang Chou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Organic field-effect transistor-based (OFET) memory devices with polyimide (PI) electrets were fabricated. Herein, we have demonstrated the relevance between electrical characteristics and polarity effects of polymeric gate electret with quasi-permanent electric charges. The memory behaviors and drain currents of OFETs could be remarkably enhanced by using polymeric PI electrets which can trap the charge carriers into its polar groups by bias-induced dipole fields. Moreover, these trapped charges can be rapidly released through reorientation of dipoles within bias field. Consequently, the electric dipoles within the PI electret play a key role in extending the memory window and enhancing electrical characteristics of OFET-based memory devices to achieve high-performance organic memory transistors.

Original languageEnglish
Title of host publicationProceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publicationTFT Technologies and FPD Materials
PublisherIEEE Computer Society
Pages169-172
Number of pages4
ISBN (Print)9784863483958
DOIs
Publication statusPublished - 2014 Jan 1
Event21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014 - Kyoto, Japan
Duration: 2014 Jul 22014 Jul 4

Publication series

NameProceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

Other

Other21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014
Country/TerritoryJapan
CityKyoto
Period14-07-0214-07-04

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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