TY - JOUR
T1 - Transition-Metal Dichalcogenide NiTe2
T2 - An Ambient-Stable Material for Catalysis and Nanoelectronics
AU - Nappini, Silvia
AU - Boukhvalov, Danil W.
AU - D'Olimpio, Gianluca
AU - Zhang, Libo
AU - Ghosh, Barun
AU - Kuo, Chia Nung
AU - Zhu, Haoshan
AU - Cheng, Jia
AU - Nardone, Michele
AU - Ottaviano, Luca
AU - Mondal, Debashis
AU - Edla, Raju
AU - Fuji, Jun
AU - Lue, Chin Shan
AU - Vobornik, Ivana
AU - Yarmoff, Jory A.
AU - Agarwal, Amit
AU - Wang, Lin
AU - Zhang, Lixue
AU - Bondino, Federica
AU - Politano, Antonio
N1 - Publisher Copyright:
© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2020/5/1
Y1 - 2020/5/1
N2 - By means of theory and experiments, the application capability of nickel ditelluride (NiTe2) transition-metal dichalcogenide in catalysis and nanoelectronics is assessed. The Te surface termination forms a TeO2 skin in an oxygen environment. In ambient atmosphere, passivation is achieved in less than 30 min with the TeO2 skin having a thickness of about 7 Å. NiTe2 shows outstanding tolerance to CO exposure and stability in water environment, with subsequent good performance in both hydrogen and oxygen evolution reactions. NiTe2-based devices consistently demonstrate superb ambient stability over a timescale as long as one month. Specifically, NiTe2 has been implemented in a device that exhibits both superior performance and environmental stability at frequencies above 40 GHz, with possible applications as a receiver beyond the cutoff frequency of a nanotransistor.
AB - By means of theory and experiments, the application capability of nickel ditelluride (NiTe2) transition-metal dichalcogenide in catalysis and nanoelectronics is assessed. The Te surface termination forms a TeO2 skin in an oxygen environment. In ambient atmosphere, passivation is achieved in less than 30 min with the TeO2 skin having a thickness of about 7 Å. NiTe2 shows outstanding tolerance to CO exposure and stability in water environment, with subsequent good performance in both hydrogen and oxygen evolution reactions. NiTe2-based devices consistently demonstrate superb ambient stability over a timescale as long as one month. Specifically, NiTe2 has been implemented in a device that exhibits both superior performance and environmental stability at frequencies above 40 GHz, with possible applications as a receiver beyond the cutoff frequency of a nanotransistor.
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U2 - 10.1002/adfm.202000915
DO - 10.1002/adfm.202000915
M3 - Article
AN - SCOPUS:85082449965
SN - 1616-301X
VL - 30
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 22
M1 - 2000915
ER -