Transparent and flexible graphene charge-trap memory

Sung Min Kim; Emil B. Song; Sejoon Lee; Jinfeng Zhu; David H. Seo; Matthew Mecklenburg; Sunae Seo; Kang L. Wang

doi:10.1021/nn302193q

Transparent and flexible graphene charge-trap memory

Sung Min Kim, Emil B. Song, Sejoon Lee, Jinfeng Zhu, David H. Seo, Matthew Mecklenburg, Sunae Seo, Kang L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

112 Citations (Scopus)

Abstract

A transparent and flexible graphene charge-trap memory (GCTM) composed of a single-layer graphene channel and a 3-dimensional gate stack was fabricated on a polyethylene naphtalate substrate below eutectic temperatures (∼110 °C). The GCTM exhibits memory functionality of ∼8.6 V memory window and 30% data retention per 10 years, while maintaining ∼80% of transparency in the visible wavelength. Under both tensile and compressive stress, the GCTM shows minimal effect on the program/erase states and the on-state current. This can be utilized for transparent and flexible electronics that require integration of logic, memory, and display on a single substrate with high transparency and endurance under flex.

Original language	English
Pages (from-to)	7879-7884
Number of pages	6
Journal	ACS nano
Volume	6
Issue number	9
DOIs	https://doi.org/10.1021/nn302193q
Publication status	Published - 2012 Sept 25

All Science Journal Classification (ASJC) codes

General Materials Science
General Engineering
General Physics and Astronomy

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10.1021/nn302193q

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AU - Kim, Sung Min

AU - Song, Emil B.

AU - Lee, Sejoon

AU - Zhu, Jinfeng

AU - Seo, David H.

AU - Mecklenburg, Matthew

AU - Seo, Sunae

AU - Wang, Kang L.

PY - 2012/9/25

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Transparent and flexible graphene charge-trap memory

Abstract

All Science Journal Classification (ASJC) codes

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