Transparent and flexible graphene charge-trap memory

Sung Min Kim, Emil B. Song, Sejoon Lee, Jinfeng Zhu, David H. Seo, Matthew Mecklenburg, Sunae Seo, Kang L. Wang

Research output: Contribution to journalArticlepeer-review

98 Citations (Scopus)

Abstract

A transparent and flexible graphene charge-trap memory (GCTM) composed of a single-layer graphene channel and a 3-dimensional gate stack was fabricated on a polyethylene naphtalate substrate below eutectic temperatures (∼110 °C). The GCTM exhibits memory functionality of ∼8.6 V memory window and 30% data retention per 10 years, while maintaining ∼80% of transparency in the visible wavelength. Under both tensile and compressive stress, the GCTM shows minimal effect on the program/erase states and the on-state current. This can be utilized for transparent and flexible electronics that require integration of logic, memory, and display on a single substrate with high transparency and endurance under flex.

Original languageEnglish
Pages (from-to)7879-7884
Number of pages6
JournalACS nano
Volume6
Issue number9
DOIs
Publication statusPublished - 2012 Sep 25

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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