Transparent conductive metal-oxide contacts in vertical-injection top-emitting quantum well lasers

Li Wei Tu; E. Fred Schubert; Hank M. O'Bryan; Yeong Her Wang; Bonnie E. Weir; George J. Zydzik; Alfred Y. Cho

doi:10.1063/1.104517

Transparent conductive metal-oxide contacts in vertical-injection top-emitting quantum well lasers

Li Wei Tu, E. Fred Schubert, Hank M. O'Bryan, Yeong Her Wang, Bonnie E. Weir, George J. Zydzik, Alfred Y. Cho

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Optically transparent and electrically conductive cadmium tin oxide is employed in vertical cavity surface-emitting lasers for vertical current injection. Continuous wave lasing at room temperature is achieved in GaAs/AlGaAs quantum well lasers. Devices with a 10 μm optical window, which also serves as a vertical current injection inlet, give lasing threshold currents as low as 3.8 mA. The differential series resistance is 350-450 Ω with a diode voltage of 5.1-5.6 V at lasing threshold. Far-field pattern of the laser emission is Gaussian-like with a full width at half maximum of 7°.

Original language	English
Pages (from-to)	790-792
Number of pages	3
Journal	Applied Physics Letters
Volume	58
Issue number	8
DOIs	https://doi.org/10.1063/1.104517
Publication status	Published - 1991

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.104517

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title = "Transparent conductive metal-oxide contacts in vertical-injection top-emitting quantum well lasers",

abstract = "Optically transparent and electrically conductive cadmium tin oxide is employed in vertical cavity surface-emitting lasers for vertical current injection. Continuous wave lasing at room temperature is achieved in GaAs/AlGaAs quantum well lasers. Devices with a 10 μm optical window, which also serves as a vertical current injection inlet, give lasing threshold currents as low as 3.8 mA. The differential series resistance is 350-450 Ω with a diode voltage of 5.1-5.6 V at lasing threshold. Far-field pattern of the laser emission is Gaussian-like with a full width at half maximum of 7°.",

author = "Tu, {Li Wei} and Schubert, {E. Fred} and O'Bryan, {Hank M.} and Wang, {Yeong Her} and Weir, {Bonnie E.} and Zydzik, {George J.} and Cho, {Alfred Y.}",

year = "1991",

doi = "10.1063/1.104517",

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AU - Tu, Li Wei

AU - Schubert, E. Fred

AU - O'Bryan, Hank M.

AU - Wang, Yeong Her

AU - Weir, Bonnie E.

AU - Zydzik, George J.

AU - Cho, Alfred Y.

PY - 1991

Y1 - 1991

N2 - Optically transparent and electrically conductive cadmium tin oxide is employed in vertical cavity surface-emitting lasers for vertical current injection. Continuous wave lasing at room temperature is achieved in GaAs/AlGaAs quantum well lasers. Devices with a 10 μm optical window, which also serves as a vertical current injection inlet, give lasing threshold currents as low as 3.8 mA. The differential series resistance is 350-450 Ω with a diode voltage of 5.1-5.6 V at lasing threshold. Far-field pattern of the laser emission is Gaussian-like with a full width at half maximum of 7°.

AB - Optically transparent and electrically conductive cadmium tin oxide is employed in vertical cavity surface-emitting lasers for vertical current injection. Continuous wave lasing at room temperature is achieved in GaAs/AlGaAs quantum well lasers. Devices with a 10 μm optical window, which also serves as a vertical current injection inlet, give lasing threshold currents as low as 3.8 mA. The differential series resistance is 350-450 Ω with a diode voltage of 5.1-5.6 V at lasing threshold. Far-field pattern of the laser emission is Gaussian-like with a full width at half maximum of 7°.

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Transparent conductive metal-oxide contacts in vertical-injection top-emitting quantum well lasers

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