Transparent RuOx contacts on n-ZnO

T. K. Lin; S. J. Chang; B. R. Huang; K. T. Lam; Y. S. Sun; M. Fujita; Y. Horikoshi

doi:10.1149/1.2202104

Transparent RuO_x contacts on n-ZnO

T. K. Lin, S. J. Chang, B. R. Huang, K. T. Lam, Y. S. Sun, M. Fujita, Y. Horikoshi

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

100 nm thick Ru films were deposited onto n-ZnO epitaxial layers by radio frequency sputtering. It was found that highly transparent Ru Ox was formed after O2 annealing. With an incident wavelength of 460 nm, it was found that transmittances of as-grown, 500°C -annealed, 600°C -annealed, and 700°C -annealed Ru films were 56.8, 73.5, 79.6, and 86.8%, respectively. It was also found that as-deposited Ru formed Schottky contact on n-ZnO. However, good ohmic contacts were formed between the annealed Ru films and the underneath ZnO. With 650°C annealing, we achieved a specific contact resistance of only 2.72× 10-4 cm2. Such a low specific contact resistance should be attributed to the formation of Ru Ox and the dissociation of oxygen atoms in ZnO during annealing.

Original language	English
Pages (from-to)	G677-G680
Journal	Journal of the Electrochemical Society
Volume	153
Issue number	7
DOIs	https://doi.org/10.1149/1.2202104
Publication status	Published - 2006 Jul

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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title = "Transparent RuOx contacts on n-ZnO",

abstract = "100 nm thick Ru films were deposited onto n-ZnO epitaxial layers by radio frequency sputtering. It was found that highly transparent Ru Ox was formed after O2 annealing. With an incident wavelength of 460 nm, it was found that transmittances of as-grown, 500°C -annealed, 600°C -annealed, and 700°C -annealed Ru films were 56.8, 73.5, 79.6, and 86.8%, respectively. It was also found that as-deposited Ru formed Schottky contact on n-ZnO. However, good ohmic contacts were formed between the annealed Ru films and the underneath ZnO. With 650°C annealing, we achieved a specific contact resistance of only 2.72× 10-4 cm2. Such a low specific contact resistance should be attributed to the formation of Ru Ox and the dissociation of oxygen atoms in ZnO during annealing.",

author = "Lin, {T. K.} and Chang, {S. J.} and Huang, {B. R.} and Lam, {K. T.} and Sun, {Y. S.} and M. Fujita and Y. Horikoshi",

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publisher = "Electrochemical Society, Inc.",

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TY - JOUR

T1 - Transparent RuOx contacts on n-ZnO

AU - Lin, T. K.

AU - Chang, S. J.

AU - Huang, B. R.

AU - Lam, K. T.

AU - Sun, Y. S.

AU - Fujita, M.

AU - Horikoshi, Y.

PY - 2006/7

Y1 - 2006/7

N2 - 100 nm thick Ru films were deposited onto n-ZnO epitaxial layers by radio frequency sputtering. It was found that highly transparent Ru Ox was formed after O2 annealing. With an incident wavelength of 460 nm, it was found that transmittances of as-grown, 500°C -annealed, 600°C -annealed, and 700°C -annealed Ru films were 56.8, 73.5, 79.6, and 86.8%, respectively. It was also found that as-deposited Ru formed Schottky contact on n-ZnO. However, good ohmic contacts were formed between the annealed Ru films and the underneath ZnO. With 650°C annealing, we achieved a specific contact resistance of only 2.72× 10-4 cm2. Such a low specific contact resistance should be attributed to the formation of Ru Ox and the dissociation of oxygen atoms in ZnO during annealing.

AB - 100 nm thick Ru films were deposited onto n-ZnO epitaxial layers by radio frequency sputtering. It was found that highly transparent Ru Ox was formed after O2 annealing. With an incident wavelength of 460 nm, it was found that transmittances of as-grown, 500°C -annealed, 600°C -annealed, and 700°C -annealed Ru films were 56.8, 73.5, 79.6, and 86.8%, respectively. It was also found that as-deposited Ru formed Schottky contact on n-ZnO. However, good ohmic contacts were formed between the annealed Ru films and the underneath ZnO. With 650°C annealing, we achieved a specific contact resistance of only 2.72× 10-4 cm2. Such a low specific contact resistance should be attributed to the formation of Ru Ox and the dissociation of oxygen atoms in ZnO during annealing.

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