Transparent TiN electrodes in GaN metal-semiconductor-metal ultraviolet photodetectors

Yu Zung Chiou; Yan Kuin Su; Shoou Jinn Chang; Jone F. Chen; Chia Sheng Chang; Sen Hai Liu; Yi Chao Lin; Chin Hsiang Chen

doi:10.1143/jjap.41.3643

Transparent TiN electrodes in GaN metal-semiconductor-metal ultraviolet photodetectors

Yu Zung Chiou, Yan Kuin Su, Shoou Jinn Chang, Jone F. Chen, Chia Sheng Chang, Sen Hai Liu, Yi Chao Lin, Chin Hsiang Chen

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

GaN-based ultraviolet (UV) photodetectors were fabricated with transparent TiN electrodes. It was found that the transmittance was higher than 80% for a 50-nm-thick TiN layer. It was also found that we can significantly reduce the dark current of the photodetectors by inserting a thin Ba_0.25Sr_0.75TiO₃ (BST) interlayer between the TiN electrode and n-GaN. With a 3-nm-thick BST interlayer, we can realize a TiN/BST/GaN photodetector with a photocurrent-to-dark current contrast as high as 2.5 × 10⁴.

Original language	English
Pages (from-to)	3643-3645
Number of pages	3
Journal	Japanese Journal of Applied Physics
Volume	41
Issue number	6 A
DOIs	https://doi.org/10.1143/jjap.41.3643
Publication status	Published - 2002 Jun

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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title = "Transparent TiN electrodes in GaN metal-semiconductor-metal ultraviolet photodetectors",

abstract = "GaN-based ultraviolet (UV) photodetectors were fabricated with transparent TiN electrodes. It was found that the transmittance was higher than 80% for a 50-nm-thick TiN layer. It was also found that we can significantly reduce the dark current of the photodetectors by inserting a thin Ba0.25Sr0.75TiO3 (BST) interlayer between the TiN electrode and n-GaN. With a 3-nm-thick BST interlayer, we can realize a TiN/BST/GaN photodetector with a photocurrent-to-dark current contrast as high as 2.5 × 104.",

author = "Chiou, {Yu Zung} and Su, {Yan Kuin} and Chang, {Shoou Jinn} and Chen, {Jone F.} and Chang, {Chia Sheng} and Liu, {Sen Hai} and Lin, {Yi Chao} and Chen, {Chin Hsiang}",

year = "2002",

month = jun,

doi = "10.1143/jjap.41.3643",

language = "English",

volume = "41",

pages = "3643--3645",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

number = "6 A",

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TY - JOUR

T1 - Transparent TiN electrodes in GaN metal-semiconductor-metal ultraviolet photodetectors

AU - Chiou, Yu Zung

AU - Su, Yan Kuin

AU - Chang, Shoou Jinn

AU - Chen, Jone F.

AU - Chang, Chia Sheng

AU - Liu, Sen Hai

AU - Lin, Yi Chao

AU - Chen, Chin Hsiang

PY - 2002/6

Y1 - 2002/6

N2 - GaN-based ultraviolet (UV) photodetectors were fabricated with transparent TiN electrodes. It was found that the transmittance was higher than 80% for a 50-nm-thick TiN layer. It was also found that we can significantly reduce the dark current of the photodetectors by inserting a thin Ba0.25Sr0.75TiO3 (BST) interlayer between the TiN electrode and n-GaN. With a 3-nm-thick BST interlayer, we can realize a TiN/BST/GaN photodetector with a photocurrent-to-dark current contrast as high as 2.5 × 104.

AB - GaN-based ultraviolet (UV) photodetectors were fabricated with transparent TiN electrodes. It was found that the transmittance was higher than 80% for a 50-nm-thick TiN layer. It was also found that we can significantly reduce the dark current of the photodetectors by inserting a thin Ba0.25Sr0.75TiO3 (BST) interlayer between the TiN electrode and n-GaN. With a 3-nm-thick BST interlayer, we can realize a TiN/BST/GaN photodetector with a photocurrent-to-dark current contrast as high as 2.5 × 104.

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DO - 10.1143/jjap.41.3643

M3 - Article

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 6 A

ER -

Transparent TiN electrodes in GaN metal-semiconductor-metal ultraviolet photodetectors

Abstract

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