Transparent TiN electrodes in GaN metal-semiconductor-metal ultraviolet photodetectors

Yu Zung Chiou; Yan Kuin Su; Shoou Jinn Chang; Jone F. Chen; Chia Sheng Chang; Sen Hai Liu; Yi Chao Lin; Chin Hsiang Chen

doi:10.1143/jjap.41.3643

Transparent TiN electrodes in GaN metal-semiconductor-metal ultraviolet photodetectors

Yu Zung Chiou
, Yan Kuin Su
, Shoou Jinn Chang
, Jone F. Chen
, Chia Sheng Chang
, Sen Hai Liu
, Yi Chao Lin
, Chin Hsiang Chen

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

GaN-based ultraviolet (UV) photodetectors were fabricated with transparent TiN electrodes. It was found that the transmittance was higher than 80% for a 50-nm-thick TiN layer. It was also found that we can significantly reduce the dark current of the photodetectors by inserting a thin Ba_0.25Sr_0.75TiO₃ (BST) interlayer between the TiN electrode and n-GaN. With a 3-nm-thick BST interlayer, we can realize a TiN/BST/GaN photodetector with a photocurrent-to-dark current contrast as high as 2.5 × 10⁴.

Original language	English
Pages (from-to)	3643-3645
Number of pages	3
Journal	Japanese Journal of Applied Physics
Volume	41
Issue number	6 A
DOIs	https://doi.org/10.1143/jjap.41.3643
Publication status	Published - 2002 Jun

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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@article{82b2fa13000a4aa4b89545ff90efda01,

title = "Transparent TiN electrodes in GaN metal-semiconductor-metal ultraviolet photodetectors",

abstract = "GaN-based ultraviolet (UV) photodetectors were fabricated with transparent TiN electrodes. It was found that the transmittance was higher than 80\% for a 50-nm-thick TiN layer. It was also found that we can significantly reduce the dark current of the photodetectors by inserting a thin Ba0.25Sr0.75TiO3 (BST) interlayer between the TiN electrode and n-GaN. With a 3-nm-thick BST interlayer, we can realize a TiN/BST/GaN photodetector with a photocurrent-to-dark current contrast as high as 2.5 × 104.",

author = "Chiou, \{Yu Zung\} and Su, \{Yan Kuin\} and Chang, \{Shoou Jinn\} and Chen, \{Jone F.\} and Chang, \{Chia Sheng\} and Liu, \{Sen Hai\} and Lin, \{Yi Chao\} and Chen, \{Chin Hsiang\}",

year = "2002",

month = jun,

doi = "10.1143/jjap.41.3643",

language = "English",

volume = "41",

pages = "3643--3645",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "6 A",

}

TY - JOUR

T1 - Transparent TiN electrodes in GaN metal-semiconductor-metal ultraviolet photodetectors

AU - Chiou, Yu Zung

AU - Su, Yan Kuin

AU - Chang, Shoou Jinn

AU - Chen, Jone F.

AU - Chang, Chia Sheng

AU - Liu, Sen Hai

AU - Lin, Yi Chao

AU - Chen, Chin Hsiang

PY - 2002/6

Y1 - 2002/6

N2 - GaN-based ultraviolet (UV) photodetectors were fabricated with transparent TiN electrodes. It was found that the transmittance was higher than 80% for a 50-nm-thick TiN layer. It was also found that we can significantly reduce the dark current of the photodetectors by inserting a thin Ba0.25Sr0.75TiO3 (BST) interlayer between the TiN electrode and n-GaN. With a 3-nm-thick BST interlayer, we can realize a TiN/BST/GaN photodetector with a photocurrent-to-dark current contrast as high as 2.5 × 104.

AB - GaN-based ultraviolet (UV) photodetectors were fabricated with transparent TiN electrodes. It was found that the transmittance was higher than 80% for a 50-nm-thick TiN layer. It was also found that we can significantly reduce the dark current of the photodetectors by inserting a thin Ba0.25Sr0.75TiO3 (BST) interlayer between the TiN electrode and n-GaN. With a 3-nm-thick BST interlayer, we can realize a TiN/BST/GaN photodetector with a photocurrent-to-dark current contrast as high as 2.5 × 104.

UR - https://www.scopus.com/pages/publications/0036614873

UR - https://www.scopus.com/pages/publications/0036614873#tab=citedBy

U2 - 10.1143/jjap.41.3643

DO - 10.1143/jjap.41.3643

M3 - Article

AN - SCOPUS:0036614873

SN - 0021-4922

VL - 41

SP - 3643

EP - 3645

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 6 A

ER -

Transparent TiN electrodes in GaN metal-semiconductor-metal ultraviolet photodetectors

Abstract

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