Transport and quantum lifetime dependence on electron density in gated GaAs/AlGaAs heterostructures

Tse Ming Chen, C. T. Liang, M. Y. Simmons, Gil Ho Kim, D. A. Ritchie

Research output: Contribution to journalConference articlepeer-review

6 Citations (Scopus)

Abstract

We present a study of the transport and quantum lifetime dependence on electron density in two completely different kinds of two-dimensional electron gas systems. We observed that both the two scattering time increase with increasing the electron density. But the ratios of the transport to the quantum lifetime have different tendency with the electron density, which do not conform to the conventional theory. We speculate that the screening effects need to be considered in order to explain our experimental results.

Original languageEnglish
Pages (from-to)312-315
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume22
Issue number1-3
DOIs
Publication statusPublished - 2004 Apr 1
Event15th International Conference on ELectronic Propreties - Nara, Japan
Duration: 2003 Jul 142003 Jul 18

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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