Transport behavior and negative magnetoresistance in chemically reduced graphene oxide nanofilms

Shu Wei Wang; H. E. Lin; Huang De Lin; K. Y. Chen; Kun Hua Tu; C. W. Chen; Ju Ying Chen; Cheng Hua Liu; C. T. Liang; Y. F. Chen

doi:10.1088/0957-4484/22/33/335701

Transport behavior and negative magnetoresistance in chemically reduced graphene oxide nanofilms

Shu Wei Wang, H. E. Lin, Huang De Lin, K. Y. Chen, Kun Hua Tu, C. W. Chen, Ju Ying Chen, Cheng Hua Liu, C. T. Liang, Y. F. Chen

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

The electron transport behavior in chemically reduced graphene oxide (rGO) sheets with different thicknesses of 2, 3, and 5nm was investigated. The four-probe method for the sheet resistance (R_S) measurement on the intensively reduced graphene oxide samples indicates an Arrhenius characteristic of the electron transport at zero magnetic field B = 0, consistent with previous experimental results on well-reduced GO samples. The anticipated variable range hopping (VRH) transport of electrons in a two-dimensional electron system at low temperatures was not observed. The measured R_S of the rGO samples are below 52kΩ/square at room temperature. With the application of a magnetic field up to 4T, negative magnetoresistance in the Mott VRH regime was observed. The magnetotransport features support a model based on the spin-coupling effect from the vacancy-induced midgap states that facilitate the Mott VRH conduction in the presence of an external magnetic field.

Original language	English
Article number	335701
Journal	Nanotechnology
Volume	22
Issue number	33
DOIs	https://doi.org/10.1088/0957-4484/22/33/335701
Publication status	Published - 2011 Aug 19

All Science Journal Classification (ASJC) codes

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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title = "Transport behavior and negative magnetoresistance in chemically reduced graphene oxide nanofilms",

abstract = "The electron transport behavior in chemically reduced graphene oxide (rGO) sheets with different thicknesses of 2, 3, and 5nm was investigated. The four-probe method for the sheet resistance (RS) measurement on the intensively reduced graphene oxide samples indicates an Arrhenius characteristic of the electron transport at zero magnetic field B = 0, consistent with previous experimental results on well-reduced GO samples. The anticipated variable range hopping (VRH) transport of electrons in a two-dimensional electron system at low temperatures was not observed. The measured RS of the rGO samples are below 52kΩ/square at room temperature. With the application of a magnetic field up to 4T, negative magnetoresistance in the Mott VRH regime was observed. The magnetotransport features support a model based on the spin-coupling effect from the vacancy-induced midgap states that facilitate the Mott VRH conduction in the presence of an external magnetic field.",

author = "Wang, {Shu Wei} and Lin, {H. E.} and Lin, {Huang De} and Chen, {K. Y.} and Tu, {Kun Hua} and Chen, {C. W.} and Chen, {Ju Ying} and Liu, {Cheng Hua} and Liang, {C. T.} and Chen, {Y. F.}",

year = "2011",

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doi = "10.1088/0957-4484/22/33/335701",

language = "English",

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T1 - Transport behavior and negative magnetoresistance in chemically reduced graphene oxide nanofilms

AU - Wang, Shu Wei

AU - Lin, H. E.

AU - Lin, Huang De

AU - Chen, K. Y.

AU - Tu, Kun Hua

AU - Chen, C. W.

AU - Chen, Ju Ying

AU - Liu, Cheng Hua

AU - Liang, C. T.

AU - Chen, Y. F.

PY - 2011/8/19

Y1 - 2011/8/19

N2 - The electron transport behavior in chemically reduced graphene oxide (rGO) sheets with different thicknesses of 2, 3, and 5nm was investigated. The four-probe method for the sheet resistance (RS) measurement on the intensively reduced graphene oxide samples indicates an Arrhenius characteristic of the electron transport at zero magnetic field B = 0, consistent with previous experimental results on well-reduced GO samples. The anticipated variable range hopping (VRH) transport of electrons in a two-dimensional electron system at low temperatures was not observed. The measured RS of the rGO samples are below 52kΩ/square at room temperature. With the application of a magnetic field up to 4T, negative magnetoresistance in the Mott VRH regime was observed. The magnetotransport features support a model based on the spin-coupling effect from the vacancy-induced midgap states that facilitate the Mott VRH conduction in the presence of an external magnetic field.

AB - The electron transport behavior in chemically reduced graphene oxide (rGO) sheets with different thicknesses of 2, 3, and 5nm was investigated. The four-probe method for the sheet resistance (RS) measurement on the intensively reduced graphene oxide samples indicates an Arrhenius characteristic of the electron transport at zero magnetic field B = 0, consistent with previous experimental results on well-reduced GO samples. The anticipated variable range hopping (VRH) transport of electrons in a two-dimensional electron system at low temperatures was not observed. The measured RS of the rGO samples are below 52kΩ/square at room temperature. With the application of a magnetic field up to 4T, negative magnetoresistance in the Mott VRH regime was observed. The magnetotransport features support a model based on the spin-coupling effect from the vacancy-induced midgap states that facilitate the Mott VRH conduction in the presence of an external magnetic field.

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JO - Nanotechnology

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ER -

Transport behavior and negative magnetoresistance in chemically reduced graphene oxide nanofilms

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