Transport measurements on MOVPE-grown InN films

Shang Chia Chen, Shih Kai Lin, Kun Ta Wu, Chao Ping Huang, Pen Hsiu Chang, N. C. Chen, Chin An Chang, Hsian Chu Peng, Chuan-Feng Shih, Kuo Shung Liu, Hong Syuan Wang, Pu Tai Yang, C. T. Liang, Y. H. Chang, Y. F. Chen

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

We have performed electrical transport measurements on InN films. Our results show that the electron transport in our InN films is metallic-like, that is, within the experimental error the carrier density is temperature- independent over a wide temperature range (4 K≤T≤290 K). At low temperatures, the resistivities of our InN devices appear to saturate and show gradual increase with increasing temperatures. We suggest that residue impurity scattering limits the electron mobility in InN films. We compare our results with existing theoretical models.

Original languageEnglish
Pages (from-to)428-430
Number of pages3
JournalMicroelectronics Journal
Volume36
Issue number3-6
DOIs
Publication statusPublished - 2005 Mar 1

Fingerprint

Metallorganic vapor phase epitaxy
electron mobility
Temperature
Metallic films
temperature
Electron mobility
Carrier concentration
impurities
electrical resistivity
Scattering
Impurities
scattering
electrons

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Chen, S. C., Lin, S. K., Wu, K. T., Huang, C. P., Chang, P. H., Chen, N. C., ... Chen, Y. F. (2005). Transport measurements on MOVPE-grown InN films. Microelectronics Journal, 36(3-6), 428-430. https://doi.org/10.1016/j.mejo.2005.02.038
Chen, Shang Chia ; Lin, Shih Kai ; Wu, Kun Ta ; Huang, Chao Ping ; Chang, Pen Hsiu ; Chen, N. C. ; Chang, Chin An ; Peng, Hsian Chu ; Shih, Chuan-Feng ; Liu, Kuo Shung ; Wang, Hong Syuan ; Yang, Pu Tai ; Liang, C. T. ; Chang, Y. H. ; Chen, Y. F. / Transport measurements on MOVPE-grown InN films. In: Microelectronics Journal. 2005 ; Vol. 36, No. 3-6. pp. 428-430.
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abstract = "We have performed electrical transport measurements on InN films. Our results show that the electron transport in our InN films is metallic-like, that is, within the experimental error the carrier density is temperature- independent over a wide temperature range (4 K≤T≤290 K). At low temperatures, the resistivities of our InN devices appear to saturate and show gradual increase with increasing temperatures. We suggest that residue impurity scattering limits the electron mobility in InN films. We compare our results with existing theoretical models.",
author = "Chen, {Shang Chia} and Lin, {Shih Kai} and Wu, {Kun Ta} and Huang, {Chao Ping} and Chang, {Pen Hsiu} and Chen, {N. C.} and Chang, {Chin An} and Peng, {Hsian Chu} and Chuan-Feng Shih and Liu, {Kuo Shung} and Wang, {Hong Syuan} and Yang, {Pu Tai} and Liang, {C. T.} and Chang, {Y. H.} and Chen, {Y. F.}",
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Chen, SC, Lin, SK, Wu, KT, Huang, CP, Chang, PH, Chen, NC, Chang, CA, Peng, HC, Shih, C-F, Liu, KS, Wang, HS, Yang, PT, Liang, CT, Chang, YH & Chen, YF 2005, 'Transport measurements on MOVPE-grown InN films', Microelectronics Journal, vol. 36, no. 3-6, pp. 428-430. https://doi.org/10.1016/j.mejo.2005.02.038

Transport measurements on MOVPE-grown InN films. / Chen, Shang Chia; Lin, Shih Kai; Wu, Kun Ta; Huang, Chao Ping; Chang, Pen Hsiu; Chen, N. C.; Chang, Chin An; Peng, Hsian Chu; Shih, Chuan-Feng; Liu, Kuo Shung; Wang, Hong Syuan; Yang, Pu Tai; Liang, C. T.; Chang, Y. H.; Chen, Y. F.

In: Microelectronics Journal, Vol. 36, No. 3-6, 01.03.2005, p. 428-430.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Transport measurements on MOVPE-grown InN films

AU - Chen, Shang Chia

AU - Lin, Shih Kai

AU - Wu, Kun Ta

AU - Huang, Chao Ping

AU - Chang, Pen Hsiu

AU - Chen, N. C.

AU - Chang, Chin An

AU - Peng, Hsian Chu

AU - Shih, Chuan-Feng

AU - Liu, Kuo Shung

AU - Wang, Hong Syuan

AU - Yang, Pu Tai

AU - Liang, C. T.

AU - Chang, Y. H.

AU - Chen, Y. F.

PY - 2005/3/1

Y1 - 2005/3/1

N2 - We have performed electrical transport measurements on InN films. Our results show that the electron transport in our InN films is metallic-like, that is, within the experimental error the carrier density is temperature- independent over a wide temperature range (4 K≤T≤290 K). At low temperatures, the resistivities of our InN devices appear to saturate and show gradual increase with increasing temperatures. We suggest that residue impurity scattering limits the electron mobility in InN films. We compare our results with existing theoretical models.

AB - We have performed electrical transport measurements on InN films. Our results show that the electron transport in our InN films is metallic-like, that is, within the experimental error the carrier density is temperature- independent over a wide temperature range (4 K≤T≤290 K). At low temperatures, the resistivities of our InN devices appear to saturate and show gradual increase with increasing temperatures. We suggest that residue impurity scattering limits the electron mobility in InN films. We compare our results with existing theoretical models.

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Chen SC, Lin SK, Wu KT, Huang CP, Chang PH, Chen NC et al. Transport measurements on MOVPE-grown InN films. Microelectronics Journal. 2005 Mar 1;36(3-6):428-430. https://doi.org/10.1016/j.mejo.2005.02.038