Transport measurements on MOVPE-grown InN films

Shang Chia Chen, Shih Kai Lin, Kun Ta Wu, Chao Ping Huang, Pen Hsiu Chang, N. C. Chen, Chin An Chang, Hsian Chu Peng, Chuang Feng Shih, Kuo Shung Liu, Hong Syuan Wang, Pu Tai Yang, C. T. Liang, Y. H. Chang, Y. F. Chen

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

We have performed electrical transport measurements on InN films. Our results show that the electron transport in our InN films is metallic-like, that is, within the experimental error the carrier density is temperature- independent over a wide temperature range (4 K≤T≤290 K). At low temperatures, the resistivities of our InN devices appear to saturate and show gradual increase with increasing temperatures. We suggest that residue impurity scattering limits the electron mobility in InN films. We compare our results with existing theoretical models.

Original languageEnglish
Pages (from-to)428-430
Number of pages3
JournalMicroelectronics Journal
Volume36
Issue number3-6
DOIs
Publication statusPublished - 2005 Mar 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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  • Cite this

    Chen, S. C., Lin, S. K., Wu, K. T., Huang, C. P., Chang, P. H., Chen, N. C., Chang, C. A., Peng, H. C., Shih, C. F., Liu, K. S., Wang, H. S., Yang, P. T., Liang, C. T., Chang, Y. H., & Chen, Y. F. (2005). Transport measurements on MOVPE-grown InN films. Microelectronics Journal, 36(3-6), 428-430. https://doi.org/10.1016/j.mejo.2005.02.038