We have performed electrical transport measurements on InN films. Our results show that the electron transport in our InN films is metallic-like, that is, within the experimental error the carrier density is temperature- independent over a wide temperature range (4 K≤T≤290 K). At low temperatures, the resistivities of our InN devices appear to saturate and show gradual increase with increasing temperatures. We suggest that residue impurity scattering limits the electron mobility in InN films. We compare our results with existing theoretical models.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering