Transport Study in Si-Silicide-Si Transistors Using a Monte Carlo Technique

Rahim Abdeshaah, K. L. Wang

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The Monte Carlo technique has been used for the study of electron motion in a proposed Si-silicide-Si transistor (SST). The transmission coefficient and the transit time are calculated as functions of lattice temperature, initial energy of electrons coming from the emitter, and the applied base-collector bias. The results show that a maximum transmission coefficient for electrons occurs when the initial energy exceeds the maximum energy barrier of the base-collector junction by about 0.1 eV, and the transit time decreases as the applied base-collector junction bias increases and as the temperature decreases. Space charge effects caused by operating at high current densities are shown to reduce slightly the transmission coefficient.

Original languageEnglish
Pages (from-to)1701-1708
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume31
Issue number12
DOIs
Publication statusPublished - 1984 Dec

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Transport Study in Si-Silicide-Si Transistors Using a Monte Carlo Technique'. Together they form a unique fingerprint.

Cite this