@article{a7166d140be945ccac92cc976da0ed7a,
title = "Transport study of a single bismuth nanowire fabricated by the silver and silicon nanowire shadow masks",
abstract = "The authors have carried out measurements of the electrical conductivity of single bismuth nanowires fabricated by the low energy electron beam lithography using the silver/silicon nanowire shadow masks. The examined nanowires had cross-sectional dimensions of 40×30 and 40×50 nm2. The chosen nanowire sizes had been slightly below the critical diameter D (∼50 nm) at which a semimetal to semiconductor phase transition was predicted to occur. The results reveal a semiconductorlike temperature dependence of the electrical conductivity of a bismuth nanowire, which is strikingly different from that of the bulk bismuth.",
author = "Choi, {D. S.} and Balandin, {A. A.} and Leung, {M. S.} and Stupian, {G. W.} and N. Presser and Chung, {S. W.} and Heath, {J. R.} and A. Khitun and Wang, {K. L.}",
note = "Funding Information: The authors gratefully acknowledge support for this work by Augmentation Awards for Science and Engineering Research Training (AASERT) Fellowship Grant No. N00014-96-1-1258, the Office of Naval Research (ONR) MURI, the ARO MURI, and the U.S. Air Force under Contract No. F04701-93-C-0094. One of the authors (J.R.H.) acknowledges ONR Contract No. N00014-981-0422. Two of the authors (K.L.W. and J.R.H.) also acknowledge the support of the Semiconductor Research Corporation. One of the authors (A.A.B.) acknowledges NSF and NASA support. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.",
year = "2006",
doi = "10.1063/1.2357847",
language = "English",
volume = "89",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "14",
}