Transport study of a single bismuth nanowire fabricated by the silver and silicon nanowire shadow masks

D. S. Choi; A. A. Balandin; M. S. Leung; G. W. Stupian; N. Presser; S. W. Chung; J. R. Heath; A. Khitun; K. L. Wang

doi:10.1063/1.2357847

Transport study of a single bismuth nanowire fabricated by the silver and silicon nanowire shadow masks

D. S. Choi
, A. A. Balandin
, M. S. Leung
, G. W. Stupian
, N. Presser
, S. W. Chung
, J. R. Heath
, A. Khitun
, K. L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

The authors have carried out measurements of the electrical conductivity of single bismuth nanowires fabricated by the low energy electron beam lithography using the silver/silicon nanowire shadow masks. The examined nanowires had cross-sectional dimensions of 40×30 and 40×50 nm2. The chosen nanowire sizes had been slightly below the critical diameter D (∼50 nm) at which a semimetal to semiconductor phase transition was predicted to occur. The results reveal a semiconductorlike temperature dependence of the electrical conductivity of a bismuth nanowire, which is strikingly different from that of the bulk bismuth.

Original language	English
Article number	141503
Journal	Applied Physics Letters
Volume	89
Issue number	14
DOIs	https://doi.org/10.1063/1.2357847
Publication status	Published - 2006

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2357847

Cite this

@article{a7166d140be945ccac92cc976da0ed7a,

title = "Transport study of a single bismuth nanowire fabricated by the silver and silicon nanowire shadow masks",

abstract = "The authors have carried out measurements of the electrical conductivity of single bismuth nanowires fabricated by the low energy electron beam lithography using the silver/silicon nanowire shadow masks. The examined nanowires had cross-sectional dimensions of 40×30 and 40×50 nm2. The chosen nanowire sizes had been slightly below the critical diameter D (∼50 nm) at which a semimetal to semiconductor phase transition was predicted to occur. The results reveal a semiconductorlike temperature dependence of the electrical conductivity of a bismuth nanowire, which is strikingly different from that of the bulk bismuth.",

author = "Choi, \{D. S.\} and Balandin, \{A. A.\} and Leung, \{M. S.\} and Stupian, \{G. W.\} and N. Presser and Chung, \{S. W.\} and Heath, \{J. R.\} and A. Khitun and Wang, \{K. L.\}",

note = "Funding Information: The authors gratefully acknowledge support for this work by Augmentation Awards for Science and Engineering Research Training (AASERT) Fellowship Grant No. N00014-96-1-1258, the Office of Naval Research (ONR) MURI, the ARO MURI, and the U.S. Air Force under Contract No. F04701-93-C-0094. One of the authors (J.R.H.) acknowledges ONR Contract No. N00014-981-0422. Two of the authors (K.L.W. and J.R.H.) also acknowledge the support of the Semiconductor Research Corporation. One of the authors (A.A.B.) acknowledges NSF and NASA support. ",

year = "2006",

doi = "10.1063/1.2357847",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Inc.",

number = "14",

}

TY - JOUR

T1 - Transport study of a single bismuth nanowire fabricated by the silver and silicon nanowire shadow masks

AU - Choi, D. S.

AU - Balandin, A. A.

AU - Leung, M. S.

AU - Stupian, G. W.

AU - Presser, N.

AU - Chung, S. W.

AU - Heath, J. R.

AU - Khitun, A.

AU - Wang, K. L.

N1 - Funding Information: The authors gratefully acknowledge support for this work by Augmentation Awards for Science and Engineering Research Training (AASERT) Fellowship Grant No. N00014-96-1-1258, the Office of Naval Research (ONR) MURI, the ARO MURI, and the U.S. Air Force under Contract No. F04701-93-C-0094. One of the authors (J.R.H.) acknowledges ONR Contract No. N00014-981-0422. Two of the authors (K.L.W. and J.R.H.) also acknowledge the support of the Semiconductor Research Corporation. One of the authors (A.A.B.) acknowledges NSF and NASA support.

PY - 2006

Y1 - 2006

N2 - The authors have carried out measurements of the electrical conductivity of single bismuth nanowires fabricated by the low energy electron beam lithography using the silver/silicon nanowire shadow masks. The examined nanowires had cross-sectional dimensions of 40×30 and 40×50 nm2. The chosen nanowire sizes had been slightly below the critical diameter D (∼50 nm) at which a semimetal to semiconductor phase transition was predicted to occur. The results reveal a semiconductorlike temperature dependence of the electrical conductivity of a bismuth nanowire, which is strikingly different from that of the bulk bismuth.

AB - The authors have carried out measurements of the electrical conductivity of single bismuth nanowires fabricated by the low energy electron beam lithography using the silver/silicon nanowire shadow masks. The examined nanowires had cross-sectional dimensions of 40×30 and 40×50 nm2. The chosen nanowire sizes had been slightly below the critical diameter D (∼50 nm) at which a semimetal to semiconductor phase transition was predicted to occur. The results reveal a semiconductorlike temperature dependence of the electrical conductivity of a bismuth nanowire, which is strikingly different from that of the bulk bismuth.

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DO - 10.1063/1.2357847

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Transport study of a single bismuth nanowire fabricated by the silver and silicon nanowire shadow masks

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